Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: II .

Abstract

In this paper we review paramagnetic point defects in amorphous silicon nitride thin films. We will discuss two intrinsic paramagnetic defects: a trivalent silicon center, named the K‐center, and the recently observed nitrogen dangling‐bond center. We examine the structural identification, and the electronic properties of the K‐center, as well as consider why normala‐SiNx:H is generally a very effective charge trapping dielectric. In addition, this paper compares and contrasts special features of the structure and electronic role of the paramagnetic point defects in both silicon dioxide and silicon nitride thin films; this may provide insight for further studies on the physics and chemistry of these dangling‐bond centers in both materials.

Comparison of neutron and gamma irradiation effects on KU1 fused silica monitored by electron paramagnetic resonance

“…Also, the inset in Fig. 1 shows the expected lines for centre E ␥ , which has g-values very similar to a wide variety of E -type defects [12]. As can be observed, such three centres allow us to explain all spectral features.…”

“…To help identifying the lines with paramagnetic defects, the upper part of Fig. 1 shows the expected magnetic field positions of the lines for known oxygen-related defects (NBOHC and POR) and E - type defects, as calculated with their principal g-values (g 1 , g 2 and g 3 ) given in the literature [11,12]. Also, the inset in Fig.…”

“…On the other hand, the electron paramagnetic resonance (EPR) technique has also been employed to identify the most abundant paramagnetic centres in fused silica [11,12]. EPR measurements in vitreous silica irradiated at low neutron fluences have been carried out [13], as well as optical and EPR studies of point defects induced by gamma irradiation in different types of silica [14,15].…”

Surface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review

“…In stoichiometric nitrides (i.e. Si 3 N 4 ), the K centers (Si atom backbonded with three N atoms) [40,41] can be charged positively [42][43][44]. This significant positive-charge density leads to a strong inversion layer on the p-type c-Si surfaces, known as the "parasitic" or "inversion-layer shunting effect," leading to a reduction of the short-circuit current and cell efficiency [45].…”

Low-Dielectric Constant SiCN Charge Trapping Layer for Nonvolatile Memory Applications

“…These defects are considered to be neutrally charged silicon dangling bonds ( 3 N Si ≡ ⋅ ), which are termed K 0 centers [9][10][11][12][13][14][15][16][17][18][19][20]. It has also been proposed that there are three charge states in the K centers [9][10][11][14][15][16]21,22]: paramagnetic neutrally charged K 0 , positively charged K + , and negatively charged K -states. The K + and K -centers have no unpaired electrons and are ESR inactive.…”