“…A modification on surface micromachining, a so-called epi-poly process [8], [9], was used for the fabrication of 11-m-thick single-sided clamped 100-m-long free-standing test structures with electrodes (Fig. 2).…”
“…A modification on surface micromachining, a so-called epi-poly process [8], [9], was used for the fabrication of 11-m-thick single-sided clamped 100-m-long free-standing test structures with electrodes (Fig. 2).…”
“…Second, the 5-10 nm/min deposition rate of the conventional low-pressure chemical vapor deposition (LPCVD) limits the practical layer thickness to about 2 m. Epitaxial growth at about 700 nm/min can be used to yield polysilicon layers on top of a dielectric layer with a thickness in excess of 10 m, thus solving the second problem. Such a process is generally referred to as an epi-poly process [13], [14]. After deposition the thick polysilicon layer can be patterned using deep reactive ion etching (DRIE).…”
“…The microstructure shown in figure 4, fabricated in the Bosch epi-poly process [17,18], was used for the experimental measurements of the dynamic pull-in transition. The device has four folded beams, 340 µm long and 2.5 µm wide, connected to two rigid central bars of about 1 mm length.…”
Section: Experimental Results and Analysismentioning
The meta-stability of the pull-in displacement of an electrostatically operated parallel plate micromechanical structure is used for the capacitive measurement of the mechanical-thermal noise spectrum in a MEMS. Pull-in time depends on force and is not affected by the input-referred noise of the readout circuit. Repeatedly bringing the microstructure to pull-in while measuring the pull-in time followed by FFT enables the measurement of the mechanical noise spectrum with a non-mechanical noise level set primarily by the resolution of the time measurement. The white noise level is found to be in agreement with the theory on damping. The 1/f noise spectrum is found to be independent of ambient gas pressure with a 1/f noise-white noise cross-over frequency at 0.007 Hz for a 1 bar gas pressure and is reproducible for devices fabricated in the same process and the same run.
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