Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95
DOI: 10.1109/sensor.1995.717293
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Novel Process For A Monolithic Integrated Accelerometer

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Cited by 93 publications
(51 citation statements)
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“…A modification on surface micromachining, a so-called epi-poly process [8], [9], was used for the fabrication of 11-m-thick single-sided clamped 100-m-long free-standing test structures with electrodes (Fig. 2).…”
Section: Device Operationmentioning
confidence: 99%
“…A modification on surface micromachining, a so-called epi-poly process [8], [9], was used for the fabrication of 11-m-thick single-sided clamped 100-m-long free-standing test structures with electrodes (Fig. 2).…”
Section: Device Operationmentioning
confidence: 99%
“…Second, the 5-10 nm/min deposition rate of the conventional low-pressure chemical vapor deposition (LPCVD) limits the practical layer thickness to about 2 m. Epitaxial growth at about 700 nm/min can be used to yield polysilicon layers on top of a dielectric layer with a thickness in excess of 10 m, thus solving the second problem. Such a process is generally referred to as an epi-poly process [13], [14]. After deposition the thick polysilicon layer can be patterned using deep reactive ion etching (DRIE).…”
Section: Microstructure Fabricationmentioning
confidence: 99%
“…The microstructure shown in figure 4, fabricated in the Bosch epi-poly process [17,18], was used for the experimental measurements of the dynamic pull-in transition. The device has four folded beams, 340 µm long and 2.5 µm wide, connected to two rigid central bars of about 1 mm length.…”
Section: Experimental Results and Analysismentioning
confidence: 99%