Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: I .

Abstract

In this paper we review and examine paramagnetic point defects in thin film amorphous silicon dioxide false(normala‐SiO2false) , which is an important insulating material in modern electronic devices. Findings unique to thin films are compared with results from bulk materials to yield a picture of the structural, physical, chemical, and electronic nature of the defect centers. The most important defect in normala‐SiO2 is emphasized, the trivalent silicon moiety termed the E′ center. We examine the types of E′ centers observed in radiation or injection damaged thermal oxides, ion sputtered oxides, plasma enhanced chemical vapor deposited oxides, ion implanted thermal oxides, plastically densified silica, fused silicas, and high surface area sol‐gel oxides. The nature of the precursor moieties, and their electrical charging phenomena are discussed. The different varieties of E′ centers are categorized, and the reliability of their distinct existence and classification is assessed.

Characterization of defects in waveguides formed by electron irradiation of silica-on-silicon

“…Both have a crossover value of 2.0006, which is within the range of values reported for centers in PECVD films [9], [19], [20], [32], [33]. The peak-to-trough values of G also agree with values reported by others, and the double humped shape of the BNR signature is generally characteristic of centers [32].…”

“…Fig. 4 shows an ESR spectrum from a BNR waveguide, together with a previously reported signature [32]. Both have a crossover value of 2.0006, which is within the range of values reported for centers in PECVD films [9], [19], [20], [32], [33].…”

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

“…The E 0 defects in SiO 2 have an unpaired electron localized at a hybrid sp3 orbital of silicon, which is bonded to three oxygen atoms (О 3 SiÁ) [65]. Several schematic models of the E 0 centers are depicted in Figure 5.…”

A Gas-Surface Interaction Model based on Accelerated Reactive Molecular Dynamics for Hypersonic Conditions including Thermal Conduction

“…There is experimental evidence for the existence of the € (≡ Si ⋅) and € (≡ Si -O ⋅) defects on silica surfaces under irradiation and fracture. The € (≡ Si ⋅) defect has been extensively studied, and has been identified on irradiated and vacuum fractured quartz and amorphous silica using Electron Spin Resonance (ESR) [44,45]. ESR in conjunction with isotope effects have been used to identify the (Fig.…”