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We investigate the Coulomb potential associated with discrete dopants in sub-0.1 pm Si-MOSFETs from the physical viewpoint. It is found that the discrimination of the Coulomb potential between the long-range and short-range parts is essential in correctly simulating the device characteristics under nonuniform discrete dopants. A new dopant model appropriate for the 3-D Drift-Diffusion (DD) simulations is proposed and it is demonstrated that the present model could properly take into account the threshold voltage variations in sub-0.1 pm MOSFETs.

Monte Carlo simulations of current fluctuation in Si n-i-n diode structures are carried out with various lengths of the intrinsic (channel) region so that electron transport under diffusive and quasi-ballistic regimes is covered. It is shown that a new current fluctuation mode associated with the fluctuation in the number of electrons in the channel region appears in sub-0.1 µm device structures. This is caused by the diffusion of high-energy electrons in the anode n-doped region, and is characteristic of sub-0.1 µm device structures since high-energy electrons in the anode originate from quasi-ballistic transport in the channel.

We study the charge transport properties of fields confined to a (2+1)dimensional defect coupled to (3+1)-dimensional super-Yang-Mills at large-N c and strong coupling, using AdS/CFT techniques applied to linear response theory. The dual system is described by N f probe D5-or D7-branes in the gravitational background of N c black D3branes. Surprisingly, the transport properties of both defect CFT's are essentially identical -even though the D7-brane construction breaks all supersymmetries. We find that the system possesses a conduction threshold given by the wave-number of the perturbation and that the charge transport arises from a quasiparticle spectrum which is consistent with an intuitive picture where the defect acquires a finite width. We also examine finite-λ modifications arising from higher derivative interactions in the probe brane action.

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