Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures: A Monte Carlo Study

Sano, Nobuyuki; Natori, Kenji; Matsuzawa, K.; Mukai, M.

doi:10.1143/jjap.38.l531

Cited by 10 publications

(8 citation statements)

References 8 publications

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“…Shot noise is generally considered to be generated primarily due to the presence of this potential barrier, although quasi-ballistic transport in the pinched-off region near the drain may also play a role in short-channel devices. More precise discussion will require physical modeling and simulation including quasi-ballistic transport and Coulomb interaction [6,30].…”

Section: Resultsmentioning

confidence: 99%

“…Physics of noise in deep-submicrometer MOSFETs is much more involved than that in long-channel MOSFETs [6][7][8][9][10]. HF noise critically affects operation of very wideband RF circuits, especially millimeter-wave circuits, because the noise integrated over a wide bandwidth contributes to the signal-tonoise ratio (SNR) of a wireless system.…”

Section: Introductionmentioning

confidence: 99%

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Direct white noise characterization of short-channel MOSFETs

Ohmori¹,

Amakawa²

2021

Preprint

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On-wafer evaluation of white thermal and shot noise in nanoscale MOSFETs is demonstrated by directly sensing the drain current under zero- and nonzsero-drain-bias (Vd) conditions for the first time, without recourse to a hot noise source, commonly needed in noise figure measurement. The dependence of white noise intensity on the drain bias clearly shows thermal noise at Vd=0 V and shot noise at Vd>0 V with its gate-bias-dependent suppression. An empirical expression for the Fano factor (shot-noise suppression factor) that is well-behaved even at Vd=0V exactly and suitable for measurement-based evaluation is proposed. The direct measurement approach could allow more accurate and predictive noise modeling of RF MOSFETs than has conventionally been possible.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Direct white noise characterization of short-channel MOSFETs

Ohmori¹,

Amakawa²

2021

Preprint

View full text Add to dashboard Cite

show abstract

“…Shot noise is generally considered to be generated primarily due to the presence of this potential barrier, although quasi-ballistic transport in the pinched-off region near the drain may also play a role in short-channel devices. More precise discussions will require physical modeling and simulation including quasi-ballistic transport and Coulomb interaction [6], [34].…”

Section: Resultsmentioning

confidence: 99%

“…The physics of noise in deep-submicrometer MOSFETs is much more involved than that in long-channel MOSFETs [6]- [11]. HF noise critically affects the operation of very wideband RF circuits, especially millimeter-wave circuits, because the noise integrated over a wide bandwidth contributes to the signal-to-noise ratio (SNR) of a wireless system.…”

Section: Introductionmentioning

confidence: 99%

Direct White Noise Characterization of Short-Channel MOSFETs

Ohmori¹,

Amakawa²

2021

IEEE Trans. Electron Devices

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On-wafer evaluation of white thermal and shot noise in nanoscale MOSFETs is demonstrated by directly sensing the drain current under zero-and nonzerodrain-bias (V d) conditions for the first time, without recourse to a hot noise source, commonly needed in noise figure measurement. The dependence of white noise intensity on the drain bias clearly shows thermal noise at V d = 0 V and shot noise at V d > 0 V with its gate-bias-dependent suppression. An empirical expression for the Fano factor (shot-noise suppression factor) that is well-behaved even at V d = 0 V exactly and suitable for measurement-based evaluation is proposed. The direct measurement approach could allow more accurate and predictive noise modeling of RF MOSFETs than has conventionally been possible.

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“…Furthermore, such high-energy electrons in the drain edge, after suffering scatterings, could be kick-backed into the channel. [3] These make the drain and the channel regions hotter, and the velocity variance in the channel and drain regions is increased.…”

Section: Spatial Origin Of Current Fluctuationmentioning

confidence: 99%

Sub-0.1 μm device simulation technology: another problem for Monte Carlo simulations

Sano

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387)

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A brief overview of unsolved issues for sub-0.1 pm Si-MOSFETs that are appropriate to be tackle4by the Monte Carlo method is presented. Also, our recent results of the Monte Carlo studies on the dynamical and intrinsic current fluctuations in Si-MOSFETs are presented. It is demon'strated that, as the number of the channel electrons decreases, the normalized standard deviation of the current variance attains a significant fraction of the averaged drain current when the device width is reduced into deep sub-pm. It is also shown that this current fluctuation mainly results from the thermal noise in the heavily-doped source and drain regions and, consequently, is nearly independent of the supply drain voltage.

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Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures: A Monte Carlo Study

Cited by 10 publications

References 8 publications

Direct white noise characterization of short-channel MOSFETs

Direct white noise characterization of short-channel MOSFETs

Direct White Noise Characterization of Short-Channel MOSFETs

Sub-0.1 μm device simulation technology: another problem for Monte Carlo simulations

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