Role of long-range and short-range Coulomb potentials in threshold characteristics under discrete dopants in sub-0.1 μm Si-MOSFETs

Sano, Nobuyuki; Matsuzawa, K.; Mukai, M.; Nakayama, Noriaki

doi:10.1109/iedm.2000.904310

Cited by 62 publications

(45 citation statements)

References 3 publications

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“…Even if microscopic simulations such as the MC method are concerned, the treatment of the electrons and impurities is not straightforward due to, again, the long-range nature of the Coulomb potential. The incorporation of the long-range Coulomb potential in the MC method has been a long-standing issue [29,30]. This problem is, in general, avoided by assuming that the electrons and the impurities are always screened by the other carriers so that the long-range part of the Coulomb interaction is effectively suppressed.…”

Section: Problems With Accurate Treatment Of the Coulomb Potentialmentioning

confidence: 99%

Quantum and Coulomb Effects in Nano Devices

Vasileska¹,

Khan²,

Ahmed³

et al. 2011

Nano-Electronic Devices

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In state of the art devices, it is well known that quantum and Coulomb effects play significant role on the device operation. In this paper we demonstrate that a novel effective potential approach in conjunction with a Monte Carlo device simulation scheme can accurately capture the quantummechanical size quantization effects. We also demonstrate, via proper treatment of the short-range Coulomb interactions, that there will be significant variation in device design parameters for devices fabricated on the same chip due to the presence of unintentional dopant atoms at random locations within the channel.

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Section: Problems With Accurate Treatment Of the Coulomb Potentialmentioning

confidence: 99%

Quantum and Coulomb Effects in Nano Devices

Vasileska¹,

Khan²,

Ahmed³

et al. 2011

Nano-Electronic Devices

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show abstract

“…Similar to the LER-induced V TH variation analysis, 200 different samples (each having a unique randomized doping concentration profile) have been tested to estimate the RDF-induced V TH variation. It should be noted that Sano's model [34] has been used for randomizing the nominal doping profile in TCAD simulations. Fig.…”

Section: Variation-robust Advanced Device Structuresmentioning

confidence: 99%

“…18 shows the randomized doping profiles in both n-type and p-type tri-gate JLTs. The 200 samples (each of which has a unique doping profile randomized by Sano's model [34]) are simulated to estimate the RDF-induced V TH variation. A higher doping concentration, especially, (i.e., more than 10 19 atoms/cm 3 ) provokes a serious RDF-induced V TH variation.…”

Section: Junctionless Transistor (Jlt) [35 36]mentioning

confidence: 99%

Analysis of Random Variations and Variation-Robust Advanced Device Structures

Nam¹,

Lee²,

Lee³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (V TH ) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted siliconon-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmentedchannel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

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“…The effect of the RDF on the turn-on characteristics of each device under investigation is quantitatively assessed with 200 samples. Note that Sano's model [8] is chosen when randomizing the doping profiles in 3-D TCAD simulations. In Fig.…”

Section: Variation-immunity Analysismentioning

confidence: 99%

Performance and Variation-Immunity Benefits of Segmented-Channel MOSFETs (SegFETs) Using HfO₂or SiO₂Trench Isolation

Nam¹,

Park²,

Shin³

2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Segmented-channel MOSFETs (SegFETs) can achieve both good performance and variation robustness through the use of HfO 2 (a high-k material) to create the shallow trench isolation (STI) region and the very shallow trench isolation (VSTI) region in them. SegFETs with both an HTI region and a VSTI region (i.e., the STI region is filled with HfO 2 , and the VSTI region is filled with SiO 2 ) can meet the device specifications for high-performance (HP) applications, whereas SegFETs with both an STI region and a VHTI region (i.e., the VSTI region is filled with HfO 2 , and the STI region is filled with SiO 2 ) are best suited to low-standby power applications. AC analysis shows that the total capacitance of the gate (C gg ) is strongly affected by the materials in the STI and VSTI regions because of the fringing electric-field effect. This implies that the highest C gg value can be obtained in an HTI/VHTI SegFET. Lastly, the three-dimensional TCAD simulation results with three different random variation sources [e.g., line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)] show that there is no significant dependence on the materials used in the STI or VSTI regions, because of the predominance of the WFV.

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Role of long-range and short-range Coulomb potentials in threshold characteristics under discrete dopants in sub-0.1 μm Si-MOSFETs

Cited by 62 publications

References 3 publications

Quantum and Coulomb Effects in Nano Devices

Quantum and Coulomb Effects in Nano Devices

Analysis of Random Variations and Variation-Robust Advanced Device Structures

Performance and Variation-Immunity Benefits of Segmented-Channel MOSFETs (SegFETs) Using HfO₂or SiO₂Trench Isolation

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Role of long-range and short-range Coulomb potentials in threshold characteristics under discrete dopants in sub-0.1 μm Si-MOSFETs

Cited by 62 publications

References 3 publications

Quantum and Coulomb Effects in Nano Devices

Quantum and Coulomb Effects in Nano Devices

Analysis of Random Variations and Variation-Robust Advanced Device Structures

Performance and Variation-Immunity Benefits of Segmented-Channel MOSFETs (SegFETs) Using HfO2or SiO2Trench Isolation

Contact Info

Product

Resources

About

Performance and Variation-Immunity Benefits of Segmented-Channel MOSFETs (SegFETs) Using HfO₂or SiO₂Trench Isolation