Physical mechanism of current fluctuation under ultra-small device structures

Sano, Nobuyuki; Natori, Kenji; Mukai, M.; Matsuzawa, K.

doi:10.1109/iwce.1998.742723

Cited by 1 publication

(1 citation statement)

References 5 publications

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“…Although it can be concluded from the experimental results and the simulation results that shot noise is suppressed in nano-MOSFET [3,4,6,11], and the Fano is closely related to the device structure parameters and working parameters, there are still no suppression mechanism and shot noise suppression strength in-depth theoretical study. The research showed that noise expression in nano-MOSFET, and considering the existence of Fermi and Coulomb at the same time, only the Fermi or Coulomb interaction, or neither with simple analysis [7,10]; The research established the total suppression factor formula of shot noise in ballistic MOSFET, with a simple explain and discussion on the relationship between the suppression factor and the gate voltage, but the formula for Coulomb and Fermi suppression was not analyzed respectively [6, 7, 10, 12 -14].…”

Section: Introductionmentioning

confidence: 85%

Research on Carrier Correlation in Ballistic Transport Nano-MOSFETs

Jia¹,

He²

2017

TOMSJ

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Objective and Method:In this paper,the experiment proved that shot noise is suppressed by Fermi and Coulomb interaction correlation. Meanwhile, the establishment of shot noise suppression factor (Fano) in ballistic transport nano-MOSFETs the Coulomb interaction correlation and the combination of the two effects are derived from separately considering the Fermi interaction correlation. And on this basis the variation of Fano with voltage, doping concentration and temperature are investigated. Result:The result we obtained which considered the combination of the two effects is in good agreement with experimental studies in the research papers, thus getting a theoretical explanation for the variation of the suppression factor with the bias voltage. Meanwhile, the suppression factor model is suitable for nano-MOSFET.

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