GeO 2 was grown by a slot-plane-antenna (SPA) high density radical oxidation, and the oxidation kinetics of radical oxidation GeO2 was examined. By the SPA radical oxidation, no substrate orientation dependence of growth rate attributed to highly reactive oxygen radicals with low oxidation activation energy was demonstrated, which is highly beneficial to three-dimensional structure devices, such as multigate field-effect transistors, to form conformal gate dielectrics. The electrical properties of an aluminum oxide (Al2O3) metal-oxide-semiconductor gate stack with a GeO2 interfacial layer were investigated, showing very low interface state density (Dit), 1.4×1011 cm−2 eV−1. By synchrotron radiation photoemission spectroscopy, the conduction and the valence band offsets of GeO2 with respect to Ge were estimated to be 1.2±0.3 and 3.6±0.1 eV, which are sufficiently high to suppress gate leakage.
In this paper, a novel shallow trench isolation (STI) process is proposed for 45 nm node technologies and beyond. The major features of this process are the use of a fluorine-doped (F-doped) SiO2 film for gap filling and high-temperature rapid thermal oxidation (HT-RTO) for gate oxidation. Voidless filling of a narrow trench can be realized by F-doped high-density plasma chemical vapor deposition (F-doped HDP-CVD). Moreover, electron mobility degradation caused by STI stress and junction leakage currents can be minimized using F-doped HDP-CVD with HT-RTO. It was also confirmed that compressive stress in the F-doped HDP-CVD sample is smaller in every measurement point around STI than that in the conventional HDP-CVD sample by convergent-beam electron diffraction (CBED). The Si-F bonds in the oxide film play a very important role in stress reduction. By utilizing HT-RTO, Si-F bonds remain and make the SiO2 film in the trench coarse. This technique is a very promising 45 nm node STI scheme with high performance and high reliability.
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