In this paper, a novel shallow trench isolation (STI) process is proposed for 45 nm node technologies and beyond. The major features of this process are the use of a fluorine-doped (F-doped) SiO2 film for gap filling and high-temperature rapid thermal oxidation (HT-RTO) for gate oxidation. Voidless filling of a narrow trench can be realized by F-doped high-density plasma chemical vapor deposition (F-doped HDP-CVD). Moreover, electron mobility degradation caused by STI stress and junction leakage currents can be minimized using F-doped HDP-CVD with HT-RTO. It was also confirmed that compressive stress in the F-doped HDP-CVD sample is smaller in every measurement point around STI than that in the conventional HDP-CVD sample by convergent-beam electron diffraction (CBED). The Si-F bonds in the oxide film play a very important role in stress reduction. By utilizing HT-RTO, Si-F bonds remain and make the SiO2 film in the trench coarse. This technique is a very promising 45 nm node STI scheme with high performance and high reliability.
Starting from the non-relativistic field theory of spin-1 2 fermions interacting through the Abelian Chern-Simons term, we show that the quantized field theory leads, in the two-particle sector, to a two-particle Aharonov-Bohm-like Schrödinger equation with an antisymmetric (fermionic) wavefunction and without a delta function term. Calculating perturbatively the field-theoretic two-particle scattering amplitude up to one-loop order, we show that, in contrast to the scalar theory, the contribution of all the one-loop diagrams is finite and null, and that of the tree level ones coincides with the exact amplitude. Further, the Pauli matter-magnetic field interaction term is shown not to contribute to the amplitude to this order. † Permanent address: P N Lebedev Institute of Physics, Moscow, Russia.
Stable F-doped SiO2 (SiOF) films have been deposited using a simple conventional capacitively coupled RF plasma-enhanced chemical vapor deposition method using H-free tetraisocyanatesilane (Si(NCO)4: TICS) diluted with oxygen, and tetrafluorosilane (SiF4) having Si–F bonds in itself. The SiO2 films deposited only with TICS have poor water resistivity, which originates in the inclusion of the SiNCO structure in the films. This property has been improved by mixing O2 with the source gases. Although F atoms at the top surface of films desorbed upon air exposure, SiOF films deposited with TICS, SiF4 and O2 exhibit excellent water resistivity. A film with F concentration of 6 at.% exhibited a dielectric constant of 3.3, a resistivity of 3.6×1015 Ωcm and a break-down electric field of 7.7 MV/cm. These values are comparable to or better than the reported values for films prepared using tetraethylorthosilicate. These results indicate that the TICS, SiF4 and O2 system can be used to deposit high quality SiOF films using a much simpler method than those requiring complex high density plasma sources.
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