Suppression of hydrogen-ion drift into underlying layers using plasma deposited silicon oxynitride film during high-density plasma chemical vapor deposition

Murata, Tatsunori; Yamaguchi, Tadashi; Sawada, Mahito; Shimizu, Satoshi; Asai, Koyu; Kobayashi, Kenzo; Miyatake, Hiroshi; Yoneda, Masahiro

doi:10.1016/j.tsf.2006.10.035

Cited by 4 publications

(2 citation statements)

References 22 publications

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“…The hydrogen concentration of the film was calculated by measuring the amount of desorbed hydrogen using thermal desorption spectroscopy (TDS) performed at temperatures ranging from 100 to 500 C. The calculation of hydrogen concentration and its accuracy was described elsewhere. 6) The leakage current of the silicon nitride films was measured using a mercury probe. To evaluate film density, the wet etching rate ratio of the silicon nitride film to the silicon oxide film was measured using buffered hydrofluoric acid.…”

Section: Methodsmentioning

confidence: 99%

Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier

Murata

Kono

Tsunemine

et al. 2008

jjap

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We demonstrated highly reliable Cu interconnects using a high-quality silicon nitride film grown at temperatures below 300 C. The low-temperature silicon nitride (LT-SiN) film, which was used as a Cu-diffusion barrier layer and a final passivation layer, was deposited at 275 C by plasma-enhanced chemical vapor deposition at a low SiH 4 flow ratio. The low SiH 4 flow ratio was due to the use of a highly dilute nitrogen flow, leading to the generation of many nitrogen radicals or ions in the plasma. These radicals or ions might reduce the hydrogen concentration and defect density of the film. As a result, a stoichiometric silicon nitride (Si 3 N 4 ) film with a low hydrogen concentration was successfully obtained. By applying this LT-SiN film in 130-nm-node Cu interconnects for magnetoresistive random access memory, highly reliable via-hole electromigration (Via-EM) and line-to-line time-dependent dielectric breakdown (TDDB) characteristics were obtained.

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Section: Methodsmentioning

confidence: 99%

Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier

Murata

Kono

Tsunemine

et al. 2008

jjap

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“…In the case of HDP-CVD device, hydrogen ions dissociated from SiH 4 precursor in plasma have kinetic energy so it can easily penetrate into underlayer drifted by electric field to the Si substrate. It was reported that hydrogen ions in plasma penetrate into underlying thermal oxide -even it is about 100nm thick oxide -and they are drifted into the Si substrate by high electric field (4,5). Although TEOS+O 3 USG process also contains hydrogen species in TEOS precursor, the hydrogen atoms or ions have little kinetic energy to penetrate into underlying layers since there is no applied external electric field or RF bias.…”

Section: Introductionmentioning

confidence: 99%

Impact of STI Gap-Fill Process Deposited by HDP-CVD in Flash Memory

et al. 2013

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This paper presents an evaluation of different oxides for shallow trench isolation (STI) gap-filling in flash memory devices. We have investigated that plasma induced degradation mechanism of high density chemical vapor deposition (HDP-CVD) oxide compared to non-plasma TEOS+O 3 undoped silicate glass (USG) for STI gap-filling process. HDP-CVD has more hydrogen contents due to H + penetration into underlying layer in plasma which generates more interface state density. Hydrogen depassivation model has been suggested to demonstrate the degradation mechanism of HDP-CVD device.

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The improvement of MOSFET performance by the optimization of STI HDP-CVD integration process

Lai

Wang

et al. 2016

Microelectronic Engineering

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Suppression of hydrogen-ion drift into underlying layers using plasma deposited silicon oxynitride film during high-density plasma chemical vapor deposition

Cited by 4 publications

References 22 publications

Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier

Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier

Impact of STI Gap-Fill Process Deposited by HDP-CVD in Flash Memory

The improvement of MOSFET performance by the optimization of STI HDP-CVD integration process

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