Single-walled carbon nanotubes (SWCNTs) are promising materials as active channels for flexible transistors owing to their excellent electrical and mechanical properties. However, flexible SWCNT transistors have never been realized on paper substrates, which are widely used, inexpensive, and recyclable. In this study, we fabricated SWCNT thin-film transistors on photo paper substrates. The devices exhibited a high on/off current ratio of more than 106 and a field-effect mobility of approximately 3 cm2/V·s. The proof-of-concept demonstration indicates that SWCNT transistors on flexible paper substrates could be applied as low-cost and recyclable flexible electronics.
We demonstrate high performance, 3D IC compatible, Ge n and p-MOSFETs fabricated at very low temperatures, below 380ºC. The low temperature gate stack comprises of high-K/metal materials. Very low series resistance (2.23×10 -4 Ω-cm at the lowest point of SRP) and shallow (92nm) source/drain (S/D) junctions with high degree of dopant activation is achieved especially in n-MOSFETs using CMOS process compatible technique -metal (Co) induced dopant activation (Co MIDA) and Ge crystallization.
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