The characteristics of Si(0.2)Ge(0.8) channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si(0.2)Ge(0.8) (110) PFET are enhanced by 70% and by 80% for the < 110 > channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe < 110 >/(110) PFET has similar to 200% hole mobility enhancement. The performance difference of the SiGe < 110 >/(110) and < 100 >/(110) PFET is about 2.7 times when considering mobility, and these effects are explained
The thermal accumulation improvement is based on laser epitaxial growth for monolithic 3D-ICs manufacturing. We propose one structure which has a thermal conduction layer such as Cu in ILD oxide layer. To reduce the Via depth and ILD oxide thickness can improve the re-crystallization quality for upper Si layer. With the conduction Cu layer, the Via depth can reduce to 200 nm, and the maximum temperature of the 1 8t layer poly gate and source/drain maintains as low as .....,320K and .....,350K, respectively, for laser re-crystallization annealing.
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