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In addition to the development of the nano-wire device, the vertical gate-all-around (V-GAA) Si nano-tube (NT) device structure is proposed with the promising device performance in this work. The vertical device structure makes the transistor easy to be scaled down continuously to meet the complementary metal-oxide-semiconductor scaling needs of the 10/7 nm technology node and beyond. The NT device with the center hollow structure has the capability to deplete the out-of gate control carriers in the center of the nano-wire device and further results in the better device short channel control. Based on the simulation data, the V-GAA Si NT device can keep the Ion-state current the same and reduce the Ioff-state stand-by power. With the demonstration of the promising device performance, the proposed V-GAA Si NT device can be regarded as one of the most promising candidates for the future application of the sub-10/7 nm logic device.