In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

“…2(a) presents the average transfer characteristics of the MOSHEMTs and RB-MOSHEMTs. The devices presented a similar threshold voltage of -6.6 V, determined at ID = 1 µA/mm, and a similar subthreshold slope (SS) of 100 ± 7 mV/dec, along with a high ON/OFF ratio over 10 10 . The density of traps at the oxide/semiconductor interface of these devices was estimated from the SS, according to Ref.…”

“…The differential RON and maximum ID of the RB-MOSHEMTs were 13.8 ± 0.6 Ω·mm and 519 ± 7 mA/mm, very close to those of the reference (12.6 ± 0.9 Ω·mm and 547 ± 7 mA/mm). The slight reduction in forward conductance can be possibly resolved by increasing the FF in the hybrid tri-anode Schottky drain [9], [10]. The VON in the RB-MOSHEMTs was 0.58 ± 0.02 V (Fig.…”

Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications

“…This study demonstrates the InAlN barrier GaN MOS-HEMT for SS <60 mV/dec (reverse sweep SS = 28 mV/dec) with the first time directly-on-Si and outstanding performance with high ON/OFF ratio (~10 7 ). Besides, the ON/OFF ratio of InAlN barrier GaN MOS-HEMT directly-on-Si can be further improved with Schottky-drain contact technology to 10 8 [9]. Comparison with different substrate and structure are shown in Figure 6.…”

“…This characteristic makes high temperature sensor applications feasible InAlN barrier metal insulator semiconductor high electron mobility transistors (MIS-HEMTs) on sapphire have been demonstrated by the Hong Kong University of Science and Technology (HKUST) [7] with Schottky source/drain with steep subthreshold swing (SS) behavior and high ON/OFF ratio. The InAlN/GaN on Si with ~10 7 and 10 8 ON/OFF ratio with Ohmic and hybrid source/drain, respectively, is reported [8,9]. Intel exhibits a near ideal 60 mV/dec of subthreshold swing for MIS-HEMT enhancement mode, and a depletion mode device with steep SS < 60 mV/dec because of “negative” capacitance effect is shown using an AlInN metal-oxide-semiconductor (MOS) HEMT on SiC [10].…”

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

“…Such a high electric field gives rise to a sufficiently narrow triangular potential well and causes a profound quantization effect in the motion of the electron perpendicular to the interface. Although a significant process in InAlN/AlN/GaN has been reported [16][17][18][19], the detailed study of the electron quantization effect on these heterostructures is still less well known. Accurate models which are at the same time computationally efficient for optimization of epilayer structure engineering are also highly desirable.…”