900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Ma, Jun; Zhu, Minghua; Matioli, Elison

doi:10.1109/led.2017.2761911

Cited by 35 publications

(16 citation statements)

References 27 publications

(25 reference statements)

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“…4(a)). In forward bias, the R ON was 20.69 • mm at 150°C, which is comparable to other integrated devices [6], [16], revealing the great potential for high temperature applications (Fig. 4(b)).…”

Section: Resultssupporting

confidence: 68%

“…Alternatively, we have recently shown the outstanding potential of tri-anode SBDs [13] with small V ON , high V BR and ultra-low leakage current for high-performance and highvoltage GaN power SBDs [14], [15] and reverse-blocking transistors [16]. In this work, we demonstrate RC-MOSHEMT with integrated tri-anode SBDs as freewheeling diodes using a relatively simple process.…”

Section: Introductionmentioning

confidence: 96%

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1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Wang

Matioli

2018

IEEE Electron Device Lett.

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In this letter, we present high-performance reverse-conduction GaN-on-Si metal-oxide-semiconductor high-electron-mobility transistors (RC-MOSHEMTs) with integrated tri-anode freewheeling diodes. Tri-anode Schottky barrier diode presenting small turn-ON voltage (V ON), ultra-low reverse leakage current, and high breakdown voltage (V BR) was incorporated at portions of the drift region of AlGaN/GaN MOSHEMTs as freewheeling diodes. The tri-anode RC-MOSHEMTs exhibited outstanding reverseconduction performance with a small V ON of 0.55 V, along with a high V BR of 1150 V, state-of-the-art low ON-resistance (R ON) of 8.83 • mm, and high-power figureof-merit (FOM = V BR 2 /R ON,SP) of 1.32 GW/cm 2. These results reveal the potential of the tri-gate/tri-anode technology for future integrated power electronic devices.

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Section: Resultssupporting

confidence: 68%

Section: Introductionmentioning

confidence: 96%

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Wang

Matioli

2018

IEEE Electron Device Lett.

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“…Recently we have proposed to reduce the VON and IR in GaN SBDs using a tri-anode structure [8], [9], and presented its capabilities for GaN RB transistors [10]. In addition, we demonstrated a slanted tri-gate structure to improve the breakdown voltage of lateral GaN devices [11], [12].…”

Section: Introductionmentioning

confidence: 96%

Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

Matioli

2018

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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“…aN-on-Si SBDs are promising as power rectifiers [1]- [10], offering high performance at a competitive cost, and can be integrated with GaN transistors to form advanced integrated power devices [11]- [14] and circuits [15]- [18]. However, a major challenge is to achieve high reverse-blocking capabilities along with low forward-conduction losses, which is an intrinsic trade-off that limits many other types of power devices.…”

Section: Introductionmentioning

confidence: 99%

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

Kampitsis

Peng

et al. 2019

IEEE Electron Device Lett.

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In this work we demonstrate high-performance lateral GaN power Schottky barrier diodes (SBDs) based on a novel multi-channel tri-gate architecture. A significant reduction in ONresistance (RON) of 50%, down to 7.2 ± 0.4 Ω•mm, along with a much smaller forward voltage (VF) of 1.57 ± 0.06 V, were achieved with multiple 2DEG channels (multi-channels) formed by periodic AlGaN/GaN heterostructures. We used a tri-anode structure to form Schottky contact to the multi-channels through the fin sidewalls, leading to a small turn-ON voltage (VON) of 0.67 ± 0.04 V. To simultaneously control the multi-channels and effectively spread the electric field in OFF state, a tri-gate structure was integrated in the anode, resulting in an ultra-low leakage current (IR) of ~1 nA/mm at-600 V and a high breakdown voltage (VBR) of-900 V at 1 µA/mm with grounded substrate. In addition, the devices presented promising switching performance, due to the small product of RON and reverse charge (Q), thanks to the optimized tri-gate geometry, and the high effective mobility (µe) of 2063 ± 123 cm 2 •V-1 s-1 despite the small fin width (w) of 50 nm. Our approach combines in a unique way the excellent electrostatic control of the tri-gate structure with the high conductivity of multi-channels, offering a promising platform for future advances in GaN power devices.

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900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Cited by 35 publications

References 27 publications

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

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