High Ge Content of SiGe Channel pMOSFETs on Si (110) Surfaces

Abstract

The characteristics of Si(0.2)Ge(0.8) channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si(0.2)Ge(0.8) (110) PFET are enhanced by 70% and by 80% for the < 110 > channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe < 110 >/(110) PFET has similar to 200% hole mobility enhancement. The performance difference of the SiGe < 110 >/(110) and < 100 >/(110) PFET is about 2.7 times when considering mobility, and these effects are explained

Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si0.2Ge0.8Reverse-Graded Buffers

“…20 Such layers are important because firstly, they can be used to realize wider CMOS channels, which could result in higher carrier mobilities 21 and secondly, they also provide sacrificial material that can be consumed during processing for wafer cleaning, fabrication of strained Ge-on-insulator platforms by wafer bonding and the formation of GeO 2 by thermal oxidation. [22][23][24] In this work, we have studied the thermal stability of metastable strained Ge surface channels grown on reverse-graded relaxed Si 0.2 Ge 0.8 buffers using in-situ hydrogen annealing. The process of strain relaxation has been observed and the dominant mechanisms by which it occurs determined.…”

Impact of strain on hole mobility in the inversion layer of PMOS device with SiGe alloy thin film

“…In fact, applying oxide as the insulator layer can be found in Refs. [1][2][3][4]. Although high-κ dielectrics (HK)/metal gate (MG) is used for current technologies, other effects resulting in additional scattering degradation, such as remote phonon or remote coulomb scattering, are removed in order to understand the contribution of SiGe alloy materials along to the mobility.…”

“…Ultra thin epitaxially grown SiGe (epi-SiGe) on Si with compressive strain has the advantages of high mobility, low cost, and compatibility with current Si manufacturing processes. Higher Ge concentration in the SiGe channel have been reported on Si (100), (110), and (111) with 200 %, 200%, and 110 % hole mobility enhancements, respectively [2][3][4]. However, the substrate orientation and carrier transportation direction should be optimized for the mobility enhancement.…”

Growth of InGaN/GaN quantum wells with graded InGaN buffer for green-to-yellow light emitters

“…III-nitride materials have been extensively studied for their applications in white-light-emitting diodes (LEDs), which become new-generation high-brightness and high-efficiency lighting sources that will replace conventional incandescent and fluorescent lamps. [1][2][3][4][5] By changing the indium content x, one can tune the band-gap energy of In x Ga 1−x N from 0.7 to 3.4 eV to cover the entire visible spectrum. Therefore, In x Ga 1−x N=GaN quantum wells (QWs) will be promising materials for producing white light through three red-greenblue monochromatic emitters (three emitters by one material) without the need for phosphors.…”