The paper reports results of examinations of photoelectric processes appeared due to growth of dislocations and defects formed by mechanical effects in Hgl-,Cd,Te crystals.Energy levels of these defects are calculated. It is also shown that in plastically deformed nHgl-,Cd,Te crystals charge carriers current and recombination properties are determined by the channels of higher electron concentration with energy gap close to the position of injected defects (-52 meV). It is demonstrated that in p-Hgl-,Cd,Te crystals the concentration of acceptor levels increases simultaneously with the formation of dislocations; the type of minority charge carriers can be changed by the acceptors levels.
CdTe needle-like crystals were grown by CTR metod in CdTe-Br system. Their resistivity is changed from 10 to 1000 cm depending on crystal diameter: it increases with the increase of wire diameters from 50 to 250 tm. Specimens with p > 10 1 cm are observed to be photosensitive at 300K. Photoconductivity spectrum is shown to depend on the whisker diameters. A model explaining the whisker electronic and photoelectrical parameters and their dimensional dependencies is discussed. This model is based on account ofthe surface states.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.