Abstract. The properties (electric, galvanomagnetic, tensoelectric) of the whisker crystals such as Si-Ge and Te-Se solid solutions, Te, 111-V compounds (GaAs, Gap, GaAsP) have been studied in a wide temperature range from 4.2 (for a number of cases from 0.4) to 300 K. The set of thermal, magnetic and mechanical sensors based on these materials has been developed. The sensors are favorably characterized by their miniature dimensions, high speed operation and improved metrological performance.
CdTe needle-like crystals were grown by CTR metod in CdTe-Br system. Their resistivity is changed from 10 to 1000 cm depending on crystal diameter: it increases with the increase of wire diameters from 50 to 250 tm. Specimens with p > 10 1 cm are observed to be photosensitive at 300K. Photoconductivity spectrum is shown to depend on the whisker diameters. A model explaining the whisker electronic and photoelectrical parameters and their dimensional dependencies is discussed. This model is based on account ofthe surface states.
GaAs:Zn whiskers grown by the gas-transport method are characterized by diffraction methods using white and monochromatic radiation. The methods applied include the white-beam topography at ESRF synchrotron source and Laue patterns, 4-circle Bond diffractometry and high-resolution diffractometry at conventional X-ray sources. The results obtained concern the growth morphology and defect structure. It is found that GaAs:Zn whiskers grown by the described method have the form of long needles and blades of the morphologies represented by growth direction and largest lateral face (112){111} and (111){112}, respectively, with a single exception of a blade of uncommon morphology (111){110}.
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