Abstract. The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping -in the quantum well and in the adjacent barrier at a small distance from the well -were used. In the case of shallow wells, in such structures the experimental results may be well described by known electron scattering mechanisms taking into account the shape of real envelope wave functions and band bending due to non-uniform distribution of the positive and negative space charges along the growth direction of heterostructure layers. In the case of delta-like doping in the well, a good agreement between experiment and calculations is achieved, if one takes into account a contribution to electron transport of the states of the impurity band formed by the deltaimpurity beneath the bottom of the lowest quantum subband.
The process of formation and relaxation of charge-carrier exclusion in a structure with an h-l-junction has been studied both theoretically and experimentally. It is shown, for the first time, that temporal dependencies of the most important process characteristics, such as the exclusion length, the extent of integral charge-carrier depletion in the base, and the current establishment, may be expressed by simple analytical formulae. The modelling experiment has been carried out using Ge crystals with intrinsic conductivity (T 300 K). In order to 'visualize' the spatial distribution of the charge carriers, the transmission beyond the edge of fundamental absorption and non-equilibrium thermal emission of the structure base in the spectral range 8-12 µm have been investigated. It is shown that thermal generation of charge carriers by the ohmic contact and base surface plays a key role in the process of exclusion relaxation. The difference between process duration in the cases of establishment of a steady-state current and spatial-charge-carrier distribution is explained by the formation of a high electric field domain.
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