Effects of the Real-Space Transfer of Charge Carriers in the n-AlGaAs/GaAs Heterostructures with the Delta-Layers of Impurity in the Barriers

Vainberg, V. V.; Pylypchuk, A. S.; Poroshin, V. N.; Sarbey, O. G.

doi:10.15407/ujpe59.07.0721

Cited by 2 publications

(7 citation statements)

References 7 publications

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“…Within the interval of fields 1 to 2 kV/cm, essential depopulation of QW with a variation of the Fermi level occurs, which leads to saturation of current-voltage characteristics. These results qualitatively explain the measured non-linear current-voltage characteristics of the heterostructures experimentally studied in the paper [23]. It should be noted that the RST effect can be also detected in the electro-optical experiments.…”

Section: Discussionsupporting

confidence: 84%

“…[23]. In calculations, we will use the following approximation for barrier height V b = 1.155x + 0.37x 2 (in eV) and the effective mass i.e.…”

Section: Results and Discussion Of Steady-state Problemmentioning

confidence: 99%

“…We describe other possible electron scattering (acoustic phonons, roughness, dislocations) that can be important in the low-field range, introducing the single elastic and isotropic scattering mechanism with an effective momentum relaxation time τ p . The latter value corresponds to the typical transport time of the low-field mobility in these heterostructures [23]. The explicit forms of the functions…”

Section: Transport Model For 2deg In Qwmentioning

confidence: 93%

“…As mentioned above, electrons inside SWs have low mobilities due to the strong scattering by impurities, dislocations and optical phonons at high temperatures. The typical values of electron mobilities in SW SW  are the order of few hundreds cm 2 /V•s [19,23]. It allows us to use Ohm's law for the current flowing through SWs.…”

Section: Transport Model For 2deg In Qwmentioning

confidence: 99%

“…Recently, the effect of RST was observed in the novel, high-quality n-AlGaAs/GaAs/AlGaAs heterostructures with δ-like doped layers in the AlGaAs barriers [23]. The values of impurity concentrations and position of δ-layer seem to be quite enough to form the low-mobility side well (SW) and ensure the effective exchange of carriers between SW and structural highmobility GaAs quantum well (QW).…”

Section: Introductionmentioning

confidence: 99%

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2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Steady-state electric characteristics of quantum heterostructures Al x Ga 1-x As/GaAs/Al x Ga 1-x As with  -doped barriers have been analyzed in this work. It has been shown that at high doping the additional low-conductive channels are formed in the barrier layers. Current-voltage characteristics of the structure were obtained in the wide interval of applied electric fields up to several kV/cm being based on the solution of Boltzmann transport equation. It has been found that in the electric fields higher than 1 kV/cm the effect of exchange of the carriers between the high-conductive channel of the GaAs quantum well and the channels in the AlGaAs barriers becomes essential. This effect gives rise to the appearance of the strongly nonlinear current-voltage characteristics with a portion of negative differential conductivity. The developed model of heterostructure is adequate to those recently fabricated and studied by Prof. Sarbey's group. The obtained results explain some observation of this paper. It has been found that the effect of electron real-space transfer takes place at both low temperatures and room temperatures, which opens perspectives to design novel type nanostructured current controlled devices.

show abstract

Section: Discussionsupporting

confidence: 84%

“…[23]. In calculations, we will use the following approximation for barrier height V b = 1.155x + 0.37x 2 (in eV) and the effective mass i.e.…”

Section: Results and Discussion Of Steady-state Problemmentioning

confidence: 99%

Section: Transport Model For 2deg In Qwmentioning

confidence: 93%

Section: Transport Model For 2deg In Qwmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer

Korotyeyev¹

2015

Semicond. Physi. Quantum Electron. Optoelectron.

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Steady-state electric characteristics of quantum heterostructures Al x Ga 1-x As/GaAs/Al x Ga 1-x As with  -doped barriers have been analyzed in this work. It has been shown that at high doping the additional low-conductive channels are formed in the barrier layers. Current-voltage characteristics of the structure were obtained in the wide interval of applied electric fields up to several kV/cm being based on the solution of Boltzmann transport equation. It has been found that in the electric fields higher than 1 kV/cm the effect of exchange of the carriers between the high-conductive channel of the GaAs quantum well and the channels in the AlGaAs barriers becomes essential. This effect gives rise to the appearance of the strongly nonlinear current-voltage characteristics with a portion of negative differential conductivity. The developed model of heterostructure is adequate to those recently fabricated and studied by Prof. Sarbey's group. The obtained results explain some observation of this paper. It has been found that the effect of electron real-space transfer takes place at both low temperatures and room temperatures, which opens perspectives to design novel type nanostructured current controlled devices.

show abstract

Effects of the Real-Space Transfer of Charge Carriers in the n-AlGaAs/GaAs Heterostructures with the Delta-Layers of Impurity in the Barriers

Cited by 2 publications

References 7 publications

Untitled

Untitled

Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer

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