2015
DOI: 10.15407/spqeo18.01.001
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Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer

Abstract: Steady-state electric characteristics of quantum heterostructures Al x Ga 1-x As/GaAs/Al x Ga 1-x As with  -doped barriers have been analyzed in this work. It has been shown that at high doping the additional low-conductive channels are formed in the barrier layers. Current-voltage characteristics of the structure were obtained in the wide interval of applied electric fields up to several kV/cm being based on the solution of Boltzmann transport equation. It has been found that in the electric fields higher th… Show more

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Cited by 4 publications
(2 citation statements)
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References 30 publications
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“…2 for AlGaAs/GaAs heterostructure with the electron concentration 0 = 10 11 cm −2 at the applied field 0 = 200 V/cm ( 0 = 7.5 × 10 6 cm/s, taken from the calculation of transport characteristics in Ref. [48]). As seen from Fig.…”
Section: Effect Of the Electron Drift On The Spectral Characteristicsmentioning
confidence: 99%
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“…2 for AlGaAs/GaAs heterostructure with the electron concentration 0 = 10 11 cm −2 at the applied field 0 = 200 V/cm ( 0 = 7.5 × 10 6 cm/s, taken from the calculation of transport characteristics in Ref. [48]). As seen from Fig.…”
Section: Effect Of the Electron Drift On The Spectral Characteristicsmentioning
confidence: 99%
“…We used the field dependences of the drift velocity, 0 ( 0 ), obtained from the kinetic theory of 2D electrons. The drift velocity and differential electron mobility were calculated with the use of solutions of the Boltzmann transport equation in the frame of the electron temperature approach [48]. In the calculations, we restrict ourselves by the consideration of a range of moderate applied fields, where the dependence of 0 ( 0 ) still shows the quasilinear behavior.…”
Section: Effect Of Electron Heatingmentioning
confidence: 99%