Miniature transducers based on Si whisker joints

Varshava, S.S.; Ostrovskii, Igor

doi:10.1016/s0924-4247(01)00913-x

Cited by 3 publications

(2 citation statements)

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“…The following combinations of doping impurities were used: <Ni+Pt>, <Ni+B>, <Ni+Mn>, <Ni+Pt+Mn>, <Au+B+Pt>, <La+Au>, <Zn+Hf+Au>. A choice of impurity types was determined as by fundamental study of low dimensional structure peculiarities [3] and by a possibility of whisker's applications [5]. For instance, behaviour of Ni as initiator of Si-Ge whisker growth is not as yet studied, while the whisker doping with rarely earth elements leads to increase of their photoconductance what is prospective for photoconverters design.…”

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confidence: 99%

Investigation of Si–Ge whisker growth by CVD

Druzhinin

Ostrovskii

2004

phys. stat. sol. (c)

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The present paper deals with study of Si 1-x Ge x (x = 0 ÷ 0.11) whiskers growth in sealed Si -Ge -Br systems by CVD method. An influence of multiple doping (Zn, Hf, Ni, Mn) on morphology of the whiskers was investigated. A model based on evaluation of impurity activity coefficients in Si crystals was proposed. High impurity activity coefficients were established to correspond to submicron whisker growth. As the impurity activity coefficient decreases, the whisker morphology changes from twinned ribbon to needle-like crystals with perfect surface of facets.

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Investigation of Si–Ge whisker growth by CVD

Druzhinin

Ostrovskii

2004

phys. stat. sol. (c)

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“…However, we have not considered the effects of whisker geometry and shape on the thermoelectric properties so far, which could be crucial as mentioned above. We did report certain results for Si, where it was shown that the features of whisker shape could be successfully used for determination of various thermoelectric values as well as for device applications [9,10], but such investigations were not earlier conducted on SiGe whiskers. The aim of this work is to study a possible influence of SiGe whiskers geometry on their thermoelectric parameters and performance.…”

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confidence: 99%

Thermoelectric Properties of Oblique SiGe Whiskers

Druzhinin¹,

Ostrovskii²,

Liakh-Kaguy³

et al. 2016

J. Nano- Electron. Phys.

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The effects of geometric features of p-type Si1-xGex (x  0.01-0.05) whiskers on their thermoelectric properties have been studied. Oblique whiskers of various diameters (10-100 m) with boron impurity concentration ranging from 10 17 to 10 20 cm-3 have been studied in the temperature range of 290-390 K. The Seebeck coefficient and resistivity of SiGe whiskers increased, while thermal conductivity decreased with decreasing diameter of crystals. However, the thermoelectric figure of merit of SiGe whiskers remained low, resembling that of bulk pure silicon. The influence of dopant impurities and germanium spatial distribution on the electronic and thermal transport in Si1-xGex whiskers was likely dominant, however, little effect of the geometry was also observed. The engineering of whiskers shape and dimensions (up to 15 % improvement of thermopower in whiskers with certain obliquity), combined with appropriate doping, would likely allow for substantial improvement of their thermoelectric performance even in bulk-like scales.

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