Effect of chlorine impurities on the long-wavelength absorption edge of CdTe single crystals

Popovych, V. D.; Потера, П.; Virt, І. S.; Bilyk, M. F.

doi:10.1134/s1063782609060086

Cited by 3 publications

(3 citation statements)

References 16 publications

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“…However, it is not clear how this may be related to their band structure origin, not only near the absorption edge, but also with respect to deeper inter-band excitations. Generally, the absorption edge studies present a sensitive tool, which reflects the contribution of the deep inter-band oscillators [50] as well as the resonances near the absorption edge, such as impurities, defects etc [51].…”

Section: Experimental Results and Their Relation To The Calculated Op...mentioning

confidence: 99%

Photoinduced features of energy bandgap in quaternary Cu₂CdGeS₄crystals

Brik¹,

Kityk²,

Parasyuk³

et al. 2013

J. Phys.: Condens. Matter

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The quaternary chalcogenide crystal Cu2CdGeS4 was studied both experimentally and theoretically in the present paper. Investigations of polarized fundamental absorption spectra demonstrated a high sensitivity to external light illumination. The photoinduced changes were studied using a cw 532 nm green laser with energy density about 0.4 J cm(-2). The spectral maximum of the photoinduced anisotropy was observed at spectral energies equal to about 1.4 eV (energy gap equal to about 1.85 eV) corresponding to maximal density of the intrinsic defect levels. Spectroscopic measurements were performed for polarized and unpolarized photoinducing laser light to separate the contribution of the intrinsic defect states from that of the pure states of the valence and conduction bands. To understand the origin of the observed photoinduced absorption near the fundamental edge, the benchmark first-principles calculations of the structural, electronic, optical and elastic properties of Cu2CdGeS4 were performed by the general gradient approximation (GGA) and local density approximation (LDA) methods. The calculated dielectric function and optical absorption spectra exhibit some anisotropic behavior (shift of the absorption maxima in different polarizations) within the 0.15-0.20 eV energy range not only near the absorption edge; optical anisotropy was also found for the deeper inter-band transition spectral range. Peculiar features of chemical bonds in Cu2CdGeS4 were revealed by studying the electron density distribution. Possible intrinsic defects are shown to affect the optical absorption spectra considerably. Pressure effects on the structural and electronic properties were modeled by optimizing the crystal structure and calculating all relevant properties at elevated hydrostatic pressure. The first estimations of the bulk modulus (69 GPa (GGA) or 91 GPa (LDA)) and its pressure derivative for Cu2CdGeS4 are also reported.

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Section: Experimental Results and Their Relation To The Calculated Op...mentioning

confidence: 99%

Photoinduced features of energy bandgap in quaternary Cu₂CdGeS₄crystals

Brik¹,

Kityk²,

Parasyuk³

et al. 2013

J. Phys.: Condens. Matter

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“…Also, Magee [11] observed that fine CdCl 2 precipitates in cadmium telluride crystals and chlorine-rich inclusions of μm size were recently revealed in heavily doped CdTe:Cl [12]. It has been shown in our previous investigations that the presence of chlorine-related inhomogeneities significantly affects the shape of the currentvoltage characteristics [13], the IR-transmission spectra [12] and the absorption edge [14] of CdTe:Cl samples.…”

Section: Introductionmentioning

confidence: 77%

“…Because it is known that A-centers V 2− Cd − Cl + − and Cl + Te are the main charge defects in CdTe:Cl [7], we assumed Z = 1. The value N t = 2.43 × 10 18 cm −3 had been previously obtained from the investigations of long-wavelength absorption edge for the material with N Cl = 5 × 10 18 cm −3 [14].…”

Section: Hall Effect Investigationmentioning

confidence: 90%

The effect of inhomogeneous dopant distribution on the electrical transport properties and thermal stability of CdTe:Cl single crystals

Popovych

Sizov

Parfenjuk

et al. 2010

Semicond. Sci. Technol.

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The Hall effect and electrical conductivity in the range of 310-420 K as well as room-temperature optical transmission of semi-insulating p-type CdTe:Cl crystals grown by the modified physical vapor transport method have been investigated. An anomalous change of their electrical parameters and mid IR-transmittance in consequence of low-temperature short-time annealing and also a non-typical temperature dependence of hole Hall mobility have been observed. The observed peculiarities are explained by inhomogeneous spatial dopant distribution within the crystals followed by the formation of chlorine-involved clusters, precipitates and inclusions that are modified during heating.

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The effect of doping with halogens on the hardness of vapour grown CdTe single crystals

Popovych

Pavlovskyy

2022

Journal of Crystal Growth

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Effect of chlorine impurities on the long-wavelength absorption edge of CdTe single crystals

Cited by 3 publications

References 16 publications

Photoinduced features of energy bandgap in quaternary Cu₂CdGeS₄crystals

Photoinduced features of energy bandgap in quaternary Cu₂CdGeS₄crystals

The effect of inhomogeneous dopant distribution on the electrical transport properties and thermal stability of CdTe:Cl single crystals

The effect of doping with halogens on the hardness of vapour grown CdTe single crystals

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Effect of chlorine impurities on the long-wavelength absorption edge of CdTe single crystals

Cited by 3 publications

References 16 publications

Photoinduced features of energy bandgap in quaternary Cu2CdGeS4crystals

Photoinduced features of energy bandgap in quaternary Cu2CdGeS4crystals

The effect of inhomogeneous dopant distribution on the electrical transport properties and thermal stability of CdTe:Cl single crystals

The effect of doping with halogens on the hardness of vapour grown CdTe single crystals

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Product

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Photoinduced features of energy bandgap in quaternary Cu₂CdGeS₄crystals

Photoinduced features of energy bandgap in quaternary Cu₂CdGeS₄crystals