The effect of inhomogeneous dopant distribution on the electrical transport properties and thermal stability of CdTe:Cl single crystals

Popovych, V. D.; Sizov, Fiodor F.; Parfenjuk, O A; Tsybrii, Z.

doi:10.1088/0268-1242/25/3/035001

Cited by 7 publications

(3 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…При одержаннi монокристалiв телуриду кадмiю з метою використання їх як детекторiв гамма-та рентґенiвського випромiнювання ми керувалися тим, що основними вимогами, що ставляться до таких матерiалiв, є їх високоомнiсть та висока рухливiсть носiїв заряду [7,9]. У цьому випадку електричноактивнi власнi точковi дефекти мають бути в рiвновазi, тобто повинна вiдбуватися компенсацiя.…”

Section: експериментunclassified

“…Наразi дослiдження ведуться в напрямку пiдвищення чутливостi матерiалу та приладiв на його основi, а також збiльшення корисного виходу матерiалу детектора [4]. Використання ж леґуючих домiшок дає змогу досягти якомога глибшого рiвня компенсацiї дефектiв i неконтрольованих домiшок, а також їх термiчної стабiлiзацiї за кiмнатної температури [5][6][7].…”

unclassified

See 1 more Smart Citation

Structural and photoluminescence properties of monocrystals CdTe:V

Kuryk¹,

Safriuk²,

Budzulyak³

et al. 2015

J. Phys. Stud.

View full text Add to dashboard Cite

Комплексно дослiджено структурнi та фотолюмiнесцентнi властивостi зразкiв монокристалiв CdTe:V, вирiзаних iз початку, середини та кiнця зливка. Виявлено зростання концентрацiї вакансiй кадмiю в напрямку росту кристала. Установлено, що найбiльш структурно досконалою є нижня частина кристала.

show abstract

Section: експериментunclassified

unclassified

Structural and photoluminescence properties of monocrystals CdTe:V

Kuryk¹,

Safriuk²,

Budzulyak³

et al. 2015

J. Phys. Stud.

View full text Add to dashboard Cite

show abstract

“…The signal of such DLs is exceeded by intrinsic carriers excited at the temperature necessary for such DLs visualization. The heating to a temperature above 400 K, where principal DLs are detected, may also irreversibly disturb the quality and electrical properties of studied material [15]. A novel approach to investigate DLs by time-of-flight measurements excited by subbandgap light (SBTOF) was reported recently in [16].…”

Section: Introductionmentioning

confidence: 99%

Deep levels in high resistive CdTe and CdZnTe explored by photo-Hall effect and photoluminescence spectroscopy

Musiienko¹,

Grill²,

Hlı́dek³

et al. 2016

Semicond. Sci. Technol.

View full text Add to dashboard Cite

High resistive CdTe and CdZnTe single crystals were measured by photo-Hall effect spectroscopy (PHES) and photoluminescence spectroscopy (PL) with the aim of discovering the position of deep levels (DLs) in the band gap. Illumination in the range of 0.65-1.77 eV, room temperature, and DC electrical measurements were used in the case of PHES. Low temperature (4 K) photoluminescence spectra were recorded in the spectral range above 0.47 eV. Eight samples, both n-type and p-type, were studied and typical shapes of spectra were collected, compared and interpreted for both spectroscopy methods. It was shown that a simple single-level model of PHES often fails in the interpretation of DLs distant from the midgap. Eight DLs with the energy E c −0.65 eV, E c −0.8 eV, E c −0.9 eV, E c −(1.10-1.15) eV, E v +0.70 eV, E v +0.85 eV, E v +1.0 eV, and E c −1.25 eV were interpreted. A memory effect characterized by a relaxation time of about 60 s was observed at the 0.8 eV level and allowed us to determine the 1.7×10 −17 cm 2 capture cross-section of electrons on this level. It is argued that PHES is a convenient complementary method to identify and characterize DLs, including DLs inaccessible by thermal emission techniques. DLs observed by PHES were consistently verified by PL.

show abstract