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The structural, optical, and electrical properties of zinc oxide (ZnO) layers manufactured at different process conditions were investigated. ZnO epitaxial layers were grown on silicon, glass, and ITO/glass substrates by pulsed laser deposition (PLD) technique. The influence of power beam, substrate temperature, and deposition time on films properties was analysed. Morphological features of the film surface were investigated by scanning electron microscopy. A structural study shown planar orientation of films at low temperatures of substrate, but the columnar type of growth originated in temperature enhances. Electrical properties were determined in the temperature range 300–500 K. It was shown that the type of films conductivity is metallic and it is limited by charge transfer across grain boundaries.

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The work is devoted to investigation of stable color centers (CC) that are created in Gd 3 Ga 5 O 12 (GGG) crystals under irradiation with γ-quanta (E=1.25 MeV, D= 10 5 Gy ) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E=0.25 MeV, pulse duration 10 ns, fluence 10 12 cm -2 , time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a defect subsystem of as-grown crystals and a type of CC induced by radiation in the crystals. The role of Ca 2+ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed.

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