Influence of color centers on optical and lasing properties of the gadolinium gallium garnet single crystals doped with Nd3+ ions

Sugak, D.; Matkovskii, A.; Durygin, Andriy; Suchocki, A.; Solskii, I.; Ubizskii, S.; Kopczyński, Krzysztof; Mierczyk, Zygmunt; Потера, П.

doi:10.1016/s0022-2313(99)00030-7

Cited by 48 publications

(30 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…6 Gy is recharging of point defects present in as-grown crystals [5,12,13]. In this case the crystal radiation resistance is determined by a state of defects subsystem, i.e.…”

Section: Introductionmentioning

confidence: 99%

Stable and transient color centers in Gd₃Ga₅O₁₂ crystals

Matkovskii

Потера²,

Sugak

et al. 2004

Cryst. Res. Technol.

View full text Add to dashboard Cite

The work is devoted to investigation of stable color centers (CC) that are created in Gd 3 Ga 5 O 12 (GGG) crystals under irradiation with γ-quanta (E=1.25 MeV, D= 10 5 Gy ) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E=0.25 MeV, pulse duration 10 ns, fluence 10 12 cm -2 , time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a defect subsystem of as-grown crystals and a type of CC induced by radiation in the crystals. The role of Ca 2+ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed.

show abstract

“…6 Gy is recharging of point defects present in as-grown crystals [5,12,13]. In this case the crystal radiation resistance is determined by a state of defects subsystem, i.e.…”

Section: Introductionmentioning

confidence: 99%

Stable and transient color centers in Gd₃Ga₅O₁₂ crystals

Matkovskii

Потера²,

Sugak

et al. 2004

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

“…The characteristics of lamp-and diode-pumped lasers with active elements made of resulting crystals are given in [17,18].…”

Section: Application and Properties Of Resulting Single Crystalsmentioning

confidence: 99%

Growing Large Size Complex Oxide Single Crystals by Czochralski Technique for Electronic Devices

Solskii¹,

Sugak

Vakiv

2013

Acta Phys. Pol. A

View full text Add to dashboard Cite

“…Moreover for the cases of irradiation of GGG crystals by fast neutrons and electrons with nearly the same energy of particle (∼3 MeV), the induced absorption per unit fluence of particle is about 10 times greater for neutrons than for electrons [27]. The analysis of absorption spectra of neodymium doped GGG crystals (concentration of growth defects in this crystal is near 10 19 cm -2 and optical changes appearing if RDP concentration is about one order of magnitude smaller than that of growth defects) irradiated by electron with energy 4 MeV presented in [28] show, that total radiation defects concentration per unit fluence should not exceed 0.79 × 10 -21 d.p.a. The value calculated in this work is 0.63 × 10 -21 d.p.a.…”

Section: Resultsmentioning

confidence: 99%

“…It is known that CCs formed by various kinds of irradiation have an essential influence on optical and output characteristics of complex oxide laser and nonlinear crystals (for example in [7][8][9][10]). This application demands in turn high optical quality of these crystals and particularly a knowledge on the possibility of color centers formation under irradiation.…”

Section: Introductionmentioning

confidence: 99%

Concentration of Radiation Displacement Defects in Complex Oxide Crystals upon Energy of Particle

Потера¹

2007

CMST

View full text Add to dashboard Cite

Abstract:The present work is devoted to the calculation of the radiation displacement defects (RDD) concentration in complex oxide crystals (Y 3 A l5 O 12 , Gd 3 Ga 5 O 12 , YAlO 3 , LiNbO 3 ) as a function of particle energy (electrons and neutrons). Energy dependencies of RDD concentration are discussed. The results of calculations show that the concentrations of RDD reduced to one impinging particle increased initially with the particles energy and they saturates for the electron and neutron energy above 25 MeV. The comparison of the concentrations of RDD calculated for different sub-lattices as well as for the cases of electrons and neutrons is made. The obtained results are compared with the experimental data.

show abstract

Influence of color centers on optical and lasing properties of the gadolinium gallium garnet single crystals doped with Nd3+ ions

Cited by 48 publications

References 8 publications

Stable and transient color centers in Gd₃Ga₅O₁₂ crystals

Stable and transient color centers in Gd₃Ga₅O₁₂ crystals

Growing Large Size Complex Oxide Single Crystals by Czochralski Technique for Electronic Devices

Concentration of Radiation Displacement Defects in Complex Oxide Crystals upon Energy of Particle

Contact Info

Product

Resources

About

Influence of color centers on optical and lasing properties of the gadolinium gallium garnet single crystals doped with Nd3+ ions

Cited by 48 publications

References 8 publications

Stable and transient color centers in Gd3Ga5O12 crystals

Stable and transient color centers in Gd3Ga5O12 crystals

Growing Large Size Complex Oxide Single Crystals by Czochralski Technique for Electronic Devices

Concentration of Radiation Displacement Defects in Complex Oxide Crystals upon Energy of Particle

Contact Info

Product

Resources

About

Stable and transient color centers in Gd₃Ga₅O₁₂ crystals

Stable and transient color centers in Gd₃Ga₅O₁₂ crystals