Photoelectric properties of dislocations in Hg/sub 1-x/Cd/sub x/Te crystals

Abstract

The paper reports results of examinations of photoelectric processes appeared due to growth of dislocations and defects formed by mechanical effects in Hgl-,Cd,Te crystals.Energy levels of these defects are calculated. It is also shown that in plastically deformed nHgl-,Cd,Te crystals charge carriers current and recombination properties are determined by the channels of higher electron concentration with energy gap close to the position of injected defects (-52 meV). It is demonstrated that in p-Hgl-,Cd,Te crystals the concentration of acceptor levels increases simultaneously with the formation of dislocations; the type of minority charge carriers can be changed by the acceptors levels.