Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited Al2O3∕Ga2O3(Gd2O3) (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a In0.53Ga0.47As MOSFET using a gate dielectric of Al2O3(2nmthick)∕GGO(5nmthick), a maximum drain current of 1.05A∕mm, a transconductance of 714mS∕mm, and a peak mobility of 1300cm2∕Vs have been achieved, the highest ever reported for III-V inversion-channel devices of 1μm gate length.

Articles you may be interested inHigh quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness Appl. Phys. Lett. 105, 222103 (2014); 10.1063/1.4903068 Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states -Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47AsLow interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxidesemiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics Appl. Phys. Lett. 99, 042908 (2011); 10.1063/1.3617436Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O 3 ∕ Ga 2 O 3 ( Gd 2 O 3 ) ∕ In 0.2 Ga 0.8 As J.An equivalent oxide thickness about 1 nm for Ga 2 O 3 ͑Gd 2 O 3 ͒ ͑GGO͒ on In 0.2 Ga 0.8 As has been achieved by employing a thin in situ deposited 3 nm thick Al 2 O 3 protection layer. The dual gate oxide stacks of the Al 2 O 3 / GGO ͑33, 20, 10, 8.5, and 4.5 nm͒/In 0.2 Ga 0.8 As/ GaAs metal-oxide-semiconductor ͑MOS͒ capacitors remain amorphous after rapid thermal annealing up to 800-850°C, accompanied with atomically sharp smooth oxide/semiconductor interfaces. Well behaved capacitance-voltage ͑C-V͒ curves of the MOS diodes have shown sharp transition from depletion to accumulation with small flatband voltage ͑1.1 V for Au metal gate and 0.1 V for Al͒, and weak frequency dispersion ͑1.5%-5.4%͒ between 10 and 500 kHz at accumulation capacitance. Low leakage current densities ͓3.1ϫ 10 −5 and 2.5ϫ 10 −9 A / cm 2 at V = V fb + 1 V for Al 2 O 3 ͑3 nm͒ / GGO͑4.5 and 8.5 nm͔͒, a high dielectric constant around 14-16 of GGO for all tested thicknesses, and a low interfacial density of states ͑D it ͒ in the low 10 11 cm −2 eV −1 have also been accomplished.

Atomic-layer-deposited Al2O3 on In0.53Ga0.47As with short air exposure between the oxide and semiconductor deposition has enabled the demonstration of nearly ideal frequency-dependent and quasistatic capacitance-voltage (C-V) characteristics. The excellent quasistatic C-V characteristics indicate a high efficiency of 63% for the Fermi-level movement near the midgap. A low mean interfacial density of states (D¯it)∼2.5×1011 cm−2 eV−1 was determined under 1 MHz using a charge pumping method, which was also employed to probe the depth profile of bulk traps (Nbt) and the energy dependence of Dit at 50 kHz: a low Nbt∼7×1018 cm−3 and a Dit of (2–4)×1011 cm−2 eV−1 in the lower half of the band gap and a higher Dit of ∼1012 cm−2 eV−1 in the upper half of the band gap. The employment of charge pumping method has given a more accurate determination of Dit, which is usually overestimated using other commonly methods such as the Terman, conductance, and high-low frequencies due to the influence of weak inversion at room temperature.

Articles you may be interested inEffect of indium concentration on InGaAs channel metal-oxide-semiconductor field-effect transistors with atomic layer deposited gate dielectric J. Vac. Sci. Technol. B 29, 040601 (2011); 10.1116/1.3597199 Self-aligned inversion-channel In 0.2 Ga 0.8 As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al 2 O 3 / Ga 2 O 3 ( Gd 2 O 3 ) as the gate dielectric J. Vac. Sci. Technol. B 29, 03C122 (2011); 10.1116/1.3565057 Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations Appl. Phys. Lett. 91, 052902 (2007); 10.1063/1.2767177 Enhancement-mode InP n -channel metal-oxide-semiconductor field-effect transistors with atomic-layerdeposited Al 2 O 3 dielectrics Appl. Phys. Lett. 91, 022108 (2007); 10.1063/1.2756106Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

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The scalability of molecular beam epitaxy grown Ga2O3(Gd2O3)∕In0.2Ga0.8As∕GaAs with in situ Al2O3 capping layers has been studied, in which the InGaAs surface Fermi level has been unpinned. The electrical and structural properties were improved with rapid thermal annealing to high temperatures of 800°C under N2 flow. As Ga2O3(Gd2O3) is scaled down to 8.5nm, the dielectric constant maintained at 14–15, similar to those of thicker oxides, resulting in an equivalent oxide thickness of 2.3nm. A low gate oxide leakage current density of 10−9A∕cm2 at ∣VG−Vfb∣=1, small flatband voltage shift (ΔVfb), low interfacial density of states (Dit) of (1–3)×1011cm−2eV−1 have been achieved.

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Molecular beam epitaxy deposited Ga2O3(Gd2O3) on Ge, without a commonly employed interfacial layer of GeON, has demonstrated excellent electrical properties, such as a high κ value of 14.5, a low electrical leakage current density, and well behaved C-V characteristics even being subjected to 500°C annealing in N2 ambient for 5min. In situ angle-resolved x-ray photoelectron spectroscopy (XPS) studies have revealed an abrupt Ga2O3(Gd2O3)∕Ge interface without forming any interfacial layer. Further XPS studies explained the outstanding thermodynamic stability of the Ga2O3(Gd2O3)∕Ge heterostructure.