Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Abstract

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High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties

“…Annealing at very high temperature of at least 1100 1C is needed to activate source/drain implanted ions for ohmic contacts in fabricating inversion-channel GaN MOS field-effect-transistors (MOSFET's) [9,10]. On that regard, single-crystal high k dielectrics offer advantages over its amorphous counterparts, as the recrystallization of the amorphous films may lead to poly-crystalline films, resulting in a high electrical leakage current.…”

“…The samples were rapid thermal annealed (RTA) at 1100 1C and dwelled there for 5 min in helium ambient, as the heat treatment is needed for fulfilling the minimum requirement for implanteddopant activation in fabricating inversion-channel GaN MOSFET [9,10]. The annealing also makes the oxide film denser and reduces the traps caused by the e-beam bombardment during the oxide deposition [17].…”

Comparison of metal-organic decomposed (MOD) cerium oxide (CeO2) gate deposited on GaN and SiC substrates

“…Wide band gap (WBG) semiconductors have attracted substantial interest in substituting Si for high-power metal-oxidesemiconductor (MOS) based devices due to their fascinating properties, such as large critical electric field, high electron mobility, and good thermal conductivity and stability [1][2][3][4][5][6]. Among the WBG semiconductors, SiC has been extensively explored and utilized as the substrate for MOS-based devices for more than a decade.…”

GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy

“…Particularly, GaN is now a strong contender as the replacement of the Si channel for complementary metal-oxide-semiconductor (CMOS) technology beyond the 16 nm node; the wide bandgap alleviates the problems of band-to-band tunneling (BTBT) and draininduced barrier lowering (DIBL), which are encountered in the small gate length devices with small bandgap channels such as Ge and Si [1][2][3].…”