GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy

MBE—Enabling technology beyond Si CMOS

“…on semiconductors (Si, (In)GaAs, Ge, and GaN) is always scientifically interesting and has made contribution to nano-electronics [6,50,51]. Single crystal semiconductors were grown on these hetero-structures forming semiconductor/oxide/semiconductor; a couple examples are given here: Si/Gd 2 O 3 /Si, GaN/Sc 2 O 3 /Si, and GaN/Gd 2 O 3 /GaN [52][53][54].…”

Study of thermal stability of distributed Bragg reflectors based on epitaxial rare-earth oxide and silicon heterostructures

“…Application of rare-earth oxides (REO) as stress mitigating buffer layers for growth of III-N semiconductors on Si substrates [1][2][3] with the potential to grow high quality two dimensional multilayer REO/semiconductor (Si,Ge) heterostructures opens possibility for engineering of distributed Bragg reflectors (DBRs) for light emitting devices. An advantage of the REO/Si DBR is the large difference between the silicon and the oxide refractive indexes, which enables achievement of high reflectivity of the mirror by growth of only several pairs of the layers.…”

Growth and application of epitaxial heterostructures with polymorphous rare-earth oxides

“…A benefit from that would be the possibility for engineering of on silicon virtual substrates like germanium, III-Vs or III-nitrides. Epitaxial heterostructures with crystalline oxide as a buffer layer can help to solve problems like lattice mismatch, difference in thermal expansion, chemical instability in contact between the active semiconductor layer and the substrate [2].…”