MBE—Enabling technology beyond Si CMOS

Self-Aligned Inversion-Channel In$_{0.53}$Ga$_{0.47}$As Metal–Oxide–Semiconductor Field-Effect Transistors withIn-situDeposited Al$_{2}$O$_{3}$/Y$_{2}$O$_{3}$ as Gate Dielectrics

“…The SS values in the previously reported inversionchannel InGaAs MOSFETs 1,2,7,8) The oxide/semiconductor hetero structures were grown in a multi chamber InGaAs/oxide molecular-beam-epitaxy (MBE) and analysis system. 10) In 0:53 Ga 0:47 As epitaxial layers were grown with a Be doping level of 1 Â 10 17 cm À3 on (100) p-InP substrates. The samples were then in-situ transferred under a vacuum of 10 À10 Torr to the oxide-MBE chamber for the dielectric growth, starting with 2-3-ML-thick Y 2 O 3 using e-beam evaporation of ceramic pallets, followed by in-situ deposition of an Al 2 O 3 3.5-3.7-nm-thick cap layer.…”