High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties

Chang, Wei; Lee, C.H.; Chang, P.; Chang, Yang-Chyuan; Lee, Y.J.; Kwo, J.; Tsai, Chieh Chih; Hong, J. M.; Hsu, Chi‐Hsin; Hong, M.

doi:10.1016/j.jcrysgro.2008.10.079

Cited by 49 publications

(24 citation statements)

References 26 publications

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“…According to the thermal phase diagram of Y 2 O 3 [18], the cubic and the hexagonal phases exist, respectively, at room temperature and temperatures above $ 2600 K. Unlike Gd 2 O 3 and many other rare-earth oxides, in which cubic, hexagonal, and monoclinic phases exist in different temperature ranges under atmospheric pressure [12,24], no monoclinic phase of Y 2 O 3 exists at ambient pressure. Bulk M-Y 2 O 3 can only be obtained by a high pressure treatment through a phase transition either from C-Y 2 O 3 under compression or from H-Y 2 O 3 under decompression [19,20].…”

Section: Resultsmentioning

confidence: 99%

“…Yttrium sesquioxide thus exhibits similar physical properties and has often been employed for the similar applications as rare-earth oxides. Gd 2 O 3 , La 2 O 3 , and Y 2 O 3 have been applied to GaAs [7][8][9][10], GaN [11][12][13], and Ge [14][15][16], respectively, as gate dielectrics for pursuing low capacitance equivalent thickness (CET) and high performance device. Among them, crystalline Gd 2 O 3 has effectively passivated GaAs surface, thus opening up a new era for GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) [7].…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN

Chang

Lee

et al. 2011

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN

Chang

Lee

et al. 2011

Journal of Crystal Growth

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“…Deposition of single crystal Gd 2 O 3 has been reported on GaN substrates in the cubic [3,4], monoclinic [5], and hexagonal [6] phases. Cubic growth on GaN was shown to have single crystal structure up to a thickness of 70 nm [3].…”

Section: Introductionmentioning

confidence: 99%

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

2015

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One µm thick Gd 2 O 3 films were grown on GaN/AlGaN heterostructures by reactive electron beam physical vapor deposition. The films were of cubic bixbyite phase with strong (222) out-of-plane and in-plane texture. The films showed a columnar microstructure with feather-like growth. Transmission electron microscopy analysis and selected area diffraction showed highly oriented single crystal like growth near the film interface which degraded as the film thickness increased. Capacitance-voltage (C-V) characteristics show that the Gd 2 O 3 device results in a negative threshold shift of approximately 1.9 V. Hysteresis of 0.9 V was extracted from the C-V curve corresponding to a trapped charge density of 6.9 x 10 10 cm-2. The conduction mechanisms were found to be dominated by Poole Frenkel conduction between 50-100 °C and Schottky emission between 125-200 °C. The trap height for Poole-Frenkel conduction was 0.46 eV and the Schottky barrier height was 0.79 eV.

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“…Therefore, numerous materials have been studied as the gate insulator in GaN-based MOS devices. These include SiO 2 [12,13], Si 3 N 4 [14], Ga 2 O 3 [1,4,9,15e26], Al 2 O 3 [27,28], MgO [29,30], Sc 2 O 3 [31,32], Ta 2 O 5 [33], CeO 2 [34e38], HfO 2 [2,39] [32,40,43], SiN [44], Pb(Zr,Ti)O 3 [45], SiO 2 /Si 3 N 4 /SiO 2 [46] and organic poly p-phenylenebenzobisthiazole [47].…”

Section: Introductionmentioning

confidence: 99%