Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited Al2O3∕Ga2O3(Gd2O3) (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a In0.53Ga0.47As MOSFET using a gate dielectric of Al2O3(2nmthick)∕GGO(5nmthick), a maximum drain current of 1.05A∕mm, a transconductance of 714mS∕mm, and a peak mobility of 1300cm2∕Vs have been achieved, the highest ever reported for III-V inversion-channel devices of 1μm gate length.

Articles you may be interested inHigh quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness Appl. Phys. Lett. 105, 222103 (2014); 10.1063/1.4903068 Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states -Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47AsLow interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxidesemiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics Appl. Phys. Lett. 99, 042908 (2011); 10.1063/1.3617436Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O 3 ∕ Ga 2 O 3 ( Gd 2 O 3 ) ∕ In 0.2 Ga 0.8 As J.An equivalent oxide thickness about 1 nm for Ga 2 O 3 ͑Gd 2 O 3 ͒ ͑GGO͒ on In 0.2 Ga 0.8 As has been achieved by employing a thin in situ deposited 3 nm thick Al 2 O 3 protection layer. The dual gate oxide stacks of the Al 2 O 3 / GGO ͑33, 20, 10, 8.5, and 4.5 nm͒/In 0.2 Ga 0.8 As/ GaAs metal-oxide-semiconductor ͑MOS͒ capacitors remain amorphous after rapid thermal annealing up to 800-850°C, accompanied with atomically sharp smooth oxide/semiconductor interfaces. Well behaved capacitance-voltage ͑C-V͒ curves of the MOS diodes have shown sharp transition from depletion to accumulation with small flatband voltage ͑1.1 V for Au metal gate and 0.1 V for Al͒, and weak frequency dispersion ͑1.5%-5.4%͒ between 10 and 500 kHz at accumulation capacitance. Low leakage current densities ͓3.1ϫ 10 −5 and 2.5ϫ 10 −9 A / cm 2 at V = V fb + 1 V for Al 2 O 3 ͑3 nm͒ / GGO͑4.5 and 8.5 nm͔͒, a high dielectric constant around 14-16 of GGO for all tested thicknesses, and a low interfacial density of states ͑D it ͒ in the low 10 11 cm −2 eV −1 have also been accomplished.

Atomic-layer-deposited Al2O3 on In0.53Ga0.47As with short air exposure between the oxide and semiconductor deposition has enabled the demonstration of nearly ideal frequency-dependent and quasistatic capacitance-voltage (C-V) characteristics. The excellent quasistatic C-V characteristics indicate a high efficiency of 63% for the Fermi-level movement near the midgap. A low mean interfacial density of states (D¯it)∼2.5×1011 cm−2 eV−1 was determined under 1 MHz using a charge pumping method, which was also employed to probe the depth profile of bulk traps (Nbt) and the energy dependence of Dit at 50 kHz: a low Nbt∼7×1018 cm−3 and a Dit of (2–4)×1011 cm−2 eV−1 in the lower half of the band gap and a higher Dit of ∼1012 cm−2 eV−1 in the upper half of the band gap. The employment of charge pumping method has given a more accurate determination of Dit, which is usually overestimated using other commonly methods such as the Terman, conductance, and high-low frequencies due to the influence of weak inversion at room temperature.

Articles you may be interested inEffect of indium concentration on InGaAs channel metal-oxide-semiconductor field-effect transistors with atomic layer deposited gate dielectric J. Vac. Sci. Technol. B 29, 040601 (2011); 10.1116/1.3597199 Self-aligned inversion-channel In 0.2 Ga 0.8 As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al 2 O 3 / Ga 2 O 3 ( Gd 2 O 3 ) as the gate dielectric J. Vac. Sci. Technol. B 29, 03C122 (2011); 10.1116/1.3565057 Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations Appl. Phys. Lett. 91, 052902 (2007); 10.1063/1.2767177 Enhancement-mode InP n -channel metal-oxide-semiconductor field-effect transistors with atomic-layerdeposited Al 2 O 3 dielectrics Appl. Phys. Lett. 91, 022108 (2007); 10.1063/1.2756106Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

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