2008
DOI: 10.1063/1.2956393
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High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Abstract: Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited Al2O3∕Ga2O3(Gd2O3) (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a In0.53Ga0.47As MOSFET using a gate dielectric of Al2O3(2nmthick)∕GGO(5nmthick), a maximum drain current of 1.05A∕mm, a transconductance of 714mS∕mm, and a peak mobility of 1300cm2∕Vs have been achieved, the highest ever reported for III-V inversion-channel devices of 1μm gate length. Show more

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Cited by 136 publications
(91 citation statements)
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“…Recently, other non-selfaligned inversion-channel In 0.53 Ga 0.47 As MOSFETs using ALD-Al 2 O 3 as a gate dielectric were also demonstrated [31], in that an 0.5-mm gate length In 0.53 Ga 0.47 As MOSFET with an ALD-Al 2 O 3 gate oxide 8 nm thick gave a maximum drain current of 367 mA/mm, and a transconductance of 130 mS/mm [32]. More recently, a 0.4-mm gate-length inversion-channel In 0.65 Ga 0.35 As MOSFET with an even higher In content and an ALD-Al 2 O 3 gate oxide 10 nm thick showed a maximum drain current of 1.05 A/ mm, and a transconductance of 350 mS/mm [33]. Nonetheless, the non-self-aligned process is impractical for device integration, due to the complexity of mask alignment as well as the unavoidable parasitic resistance.…”
Section: Attainment Of High-performance Inversion-channel Ggo/ingaas mentioning
confidence: 96%
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“…Recently, other non-selfaligned inversion-channel In 0.53 Ga 0.47 As MOSFETs using ALD-Al 2 O 3 as a gate dielectric were also demonstrated [31], in that an 0.5-mm gate length In 0.53 Ga 0.47 As MOSFET with an ALD-Al 2 O 3 gate oxide 8 nm thick gave a maximum drain current of 367 mA/mm, and a transconductance of 130 mS/mm [32]. More recently, a 0.4-mm gate-length inversion-channel In 0.65 Ga 0.35 As MOSFET with an even higher In content and an ALD-Al 2 O 3 gate oxide 10 nm thick showed a maximum drain current of 1.05 A/ mm, and a transconductance of 350 mS/mm [33]. Nonetheless, the non-self-aligned process is impractical for device integration, due to the complexity of mask alignment as well as the unavoidable parasitic resistance.…”
Section: Attainment Of High-performance Inversion-channel Ggo/ingaas mentioning
confidence: 96%
“…Nonetheless, the non-self-aligned process is impractical for device integration, due to the complexity of mask alignment as well as the unavoidable parasitic resistance. Recently, we have succeeded in attaining self-aligned inversion-channel In 0.53-Ga 0.47 As MOSFETs of 1-mm gate length by employing a MBEdeposited gate dielectric stack of Al 2 O 3 (2 nm)/GGO(7 nm) and TiN metal gate [33]. In situ deposited Al 2 O 3 was used to protect GGO from absorbing moisture during fabrication of devices, and TiN was chosen due to its suitable work function and thermal stability.…”
Section: Attainment Of High-performance Inversion-channel Ggo/ingaas mentioning
confidence: 99%
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“…These oxides have been employed to fabricate depletion-mode (D-mode) [9,10] and inversion-channel InGaAs MOSFET [11][12][13][14][15]. In comparison, the D it 's measured in the GaAs MOS capacitors (MOSCAPs) using MBE-GGO are in the range of $10 11 cm À2 eV À1 , one order of magnitude lower than those of capacitors using ALD oxides.…”
Section: Introductionmentioning
confidence: 95%
“…Already, the in-situ multi-chamber MBE/analysis system [4,5] has made pioneering contributions to the InGaAs MOSFETs [6][7][8][9][10][11][12]; MBE-Ga 2 O 3 (Gd 2 O 3 ) (GGO) [5] and Gd 2 O 3 [6] films on (In)GaAs have achieved a low D it , low leakage current densities, and thermal stability at high temperatures, required for fabricating self-aligned inversion-channel InGaAs MOSFET. Indeed, the first inversion-channel GaAs and InGaAs MOSFETs [7][8][9], and a CMOS [13] were demonstrated with GGO as a gate dielectric.…”
Section: Introductionmentioning
confidence: 99%