Research advances on III–V MOSFET electronics beyond Si CMOS

Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al$_{2}$O$_{3}$ on Chemically Treated InP Surfaces

“…[1][2][3] However, a number of obstacles have to be overcome before large scale integration can take place, principal among these being the large level of defects and scattering centers that are generated at the semiconductor oxide interface as a result of high-k oxide growth. [4][5][6] Engineering the interface between the semiconductor and the oxide is one of the most pressing issues to be resolved; therefore, understanding the interactions that take place at the initial stages of oxide growth becomes increasingly important.…”

MBE—Enabling technology beyond Si CMOS

“…MBE-Al 2 O 3 and -HfO 2 on Si, on the other hand, have given atomically abrupt interfaces without the interfacial layer [22]. An innovative MBE+ ALD-HfO 2 on Si has given an EOT of 0.7 nm with a leakage current density of 5.3 Â 10 À 1 A/cm 2 at V FB À1V, a D it value of 3.6 Â 10 11 cm À 2 eV À 1 , and a MOSFET with good device performance [23,24].…”

Interfacial X‐ray photospectrometry study of In 0.53 Ga 0.47 As under different passivation treatments for metal oxide semiconductor field effect transistor devices

“…Ga 2 O 3 (Gd 2 O 3 ) [GGO] [12], HfO 2 [13] and Al 2 O 3 [9] have already been tested in previous works. In this study, Al 2 O 3 is chosen because it produces an excellent result of D it based on the literature and many groups have employed it as a standard oxide [14, 15]. In terms of thermal and electrical properties, Al is really stable in high temperature (max = 1000°C) with high permittivity ( K = 8.6–9.0) and high bandgap value (9 eV).…”