Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics

GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation

“…MOSFETs, which include In 0.2 Ga 0.8 As MOSFETs. 10,11,[16][17][18]25) For a fair comparison, we selected D-mode MOSFETs in a planar configuration. Considering the L g of the devices, this drain current value is comparable to those of the previously reported ∼1 μm L g D-mode (In)GaAs MOSFETs, 10,11,[16][17][18]25) where smaller gate-to-source/drain distances were employed, which gave higher drain currents.…”

“…10,11,[16][17][18]25) For a fair comparison, we selected D-mode MOSFETs in a planar configuration. Considering the L g of the devices, this drain current value is comparable to those of the previously reported ∼1 μm L g D-mode (In)GaAs MOSFETs, 10,11,[16][17][18]25) where smaller gate-to-source/drain distances were employed, which gave higher drain currents. Among the device performances listed in Table I, the enhancement of the drain current from flat-band to the maximum value varies significantly.…”

Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device

“…In 0.2 Ga 0.8 As, a channel for GaAs-based high electron mobility transistors, 21 and inversion-channel 12 /depletion-mode 22 MOSFETs is attractive due to its excellent strained-growth on GaAs and thermal stability at high temperatures above 850 C. 23 It was previously reported that with heavily doped and compositionally graded InAs/In x Ga 1Àx As/GaAs layer, an extremely low specific contact resistivity of 5 Â 10 À9 X cm 2 has been achieved by using nonalloyed Ti/Pt/Au Ohmic contact, which reveals the benefit of using the In x Ga 1Àx As/GaAs heterostructure for lowering contact resistivity. 24 This was expected as InAs, the lowest band gap semiconductor of In x Ga 1Àx As, was employed.…”

MBE—Enabling technology beyond Si CMOS

“…Indeed, the first inversion-channel GaAs and InGaAs MOSFETs [7][8][9], and a CMOS [13] were demonstrated with GGO as a gate dielectric. Also, depletion-mode (In)GaAs MOSFET's [14,15], and a power device [16] were shown to exhibit negligible drain current drift and hysteresis.…”