“…7 As summarized in Table I for high-k / In 0.53 Ga 0. 47 As interfaces, many different methods have been employed, such as interpretation of shifts in the capacitance-voltage ͑CV͒ curves with gate metal work function, 11,23 the combined high-low frequency capacitance ͑Castagné-Vapaille͒ method, 14 the Terman ͑high-frequency capacitance͒ method, 16,19,20 the Berglund integral, 11,12,27 the conductance method, 8,10,13,[15][16][17][18]21,24,28 and the Fermi level efficiency method. 29 As can be seen from Table I, reported D it values differ by several orders of magnitude, ranging from low-10 11 cm −2 eV −1 to exceeding 10 13 cm −2 eV −1 .…”