Hardness is an essential property for a wide range of applications. However, hardness alone, typically accompanied by brittleness, is not sufficient to prevent failure in ceramic films exposed to high stresses. Using VN as a model system, we demonstrate with experiment and density functional theory (DFT) that refractory VMoN alloys exhibit not only enhanced hardness, but dramatically increased ductility. V0.5Mo0.5N hardness is 25% higher than that of VN. In addition, while nanoindented VN, as well as TiN reference samples, suffer from severe cracking typical of brittle ceramics, V0.5Mo0.5N films do not crack. Instead, they exhibit material pile-up around nanoindents, characteristic of plastic flow in ductile materials. Moreover, the wear resistance of V0.5Mo0.5N is considerably higher than that of VN. DFT results show that tuning the occupancy of d–t2g metallic bonding states in VMoN facilitates dislocation glide, and hence enhances toughness, via the formation of stronger metal/metal bonds along the slip direction and weaker metal/N bonds across the slip plane

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The accurate detection and dosimetry of neutrons in mixed and pulsed radiation fields is a demanding instrumental issue with great interest both for the industrial and medical communities. In recent studies of neutron contamination around medical linacs, there is a growing concern about the secondary cancer risk for radiotherapy patients undergoing treatment in photon modalities at energies greater than 6 MV. In this work we present a promising alternative to standard detectors with an active method to measure neutrons around a medical linac using a novel ultra-thin silicon detector with 3D electrodes adapted for neutron detection. The active volume of this planar device is only 10 µm thick, allowing a high gamma rejection, which is necessary to discriminate the neutron signal in the radiotherapy peripheral radiation field with a high gamma background. Different tests have been performed in a clinical facility using a Siemens PRIMUS linac at 6 and 15 MV. The results show a good thermal neutron detection efficiency around 2% and a high gamma rejection factor.

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We describe the design, fabrication process and characterization of a thermal neutron detector based on ultra-thin silicon PIN diodes with 3D electrodes and a 10 B 4 C neutron converter layer. The sensors were fabricated on SOI silicon with an active thickness of 20 µm which allows for a low gamma sensitivity, while the 3D structure of the electrodes results in a lower capacitance that in the equivalent planar sensor. The 2.7 µm 10 B 4 C converter layer was deposited through RF magnetron sputtering on a whole silicon wafer, opening the path for mass-production. The detectors were tested in a thermal neutron beam at the nuclear reactor at the Instituto Superior Técnico in Lisbon and their intrinsic detection efficiency for themal neutrons and the gamma sensitivity as a function of the energy threshold were obtained.

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