WO 3 -based gas sensors were investigated under UV-light irradiation and at different working temperatures with the object of achieving superior sensitivity and selectivity. Resistance fluctuations in the WO 3 layer were studied together with dc resistance measurements. The data were taken in synthetic air, ethanol, nitrogen dioxide, and mixtures of these gases. We conclude that UV irradiation can easily be applied to enhance the gas sensing properties of a WO 3 layer.
Specimens of Si single crystals with different crystal orientation [100] and [110] were studied by ElectroUltrasonic Spectroscopy (EUS) and Resonant Ultrasonic Spectroscopy (RUS). A silicon single crystal is an anisotropic crystal, so its properties are different in different directions in the material relative to the crystal orientation. EUS is based on interaction of two signals: an electric AC signal and an ultrasonic signal, which are working on different frequencies. The ultrasonic wave affects the charge carriers' transport in the structures and the intermodulation electrical signal which is created due to the interaction between the ultrasonic wave and charge carriers, is proportional to the density of structural defects. RUS enables to measure natural frequencies of free elastic vibrations of a simply shaped specimen by scanning a selected frequency range including the appropriate resonances of the measured specimens.
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