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This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nm s ±1 , using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.

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Morphology and structure evolution of Cu(In,Ga)S2 films deposited by reactive magnetron co-sputtering with electron cyclotron resonance plasma assistance J. Appl. Phys. 115, 084902 (2014); 10.1063/1.4866717The electronic structure of co-sputtered zinc indium tin oxide thin films Abstract: Electron effects in sputteringWe had previously observed, when cosputtering from a single target, that the deposited film was far from uniform, even showing a pattern resembling that of the target. Having subsequently made some energy and power measurements of the negative particles bombarding the anode in a sputtering system, we have concluded that the patterning is due to fast secondary electrons from the target. These secondary electrons are of importance in all types of sputter deposition, since a significant number of them travel in straight lines to the anode without collision. They are responsible for almost all of the power input into the anode and can dominate the growth of a thin film on a substrate at the anode.

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