New nanostructured silicon films grown by PECVD technique under controlled powder formation conditions

Martins, Rodrigo; Águas, Hugo; Cabrita, A.; Tonello, P.; Silva, V.; Ferreira, I.; Fortunato, Elvira; Guimarães, L.

doi:10.1016/s0038-092x(01)00060-3

Cited by 5 publications

(5 citation statements)

References 18 publications

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“…Plasma-enhanced technologies have attracted considerable interest of scientists for the synthesis of different kinds of nanostructured materials (Blum 1999;Dai 2013;Martins 2001). As it has been demonstrated, plasma processes can be successfully used for fabrication by low-pressure low-temperature glow discharges of nanoparticles of various substances: metals (Alexandrov 2009;Kouprine 2006), silicon and aluminum nitrides (Bouchkour 2011;Viera 1998Viera , 1999, silicon and titanium oxides (Kouprine 2007).…”

Section: Introductionmentioning

confidence: 99%

Experimental study of fractal clusters formation from nanoparticles synthesized by atmospheric pressure plasma-enhanced chemical vapor deposition

2014

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This paper presents the experimental results from the fractal structures formation from nanoparticles of silicone dioxide deposited on the silicon substrate surface. Nanoparticles are synthesized by atmospheric pressure plasma-enhanced chemical vapor deposition with the use of capacitively coupled radio frequency (13.56 MHz) discharge sustained in helium atmosphere. Tetraethoxysilane is chosen as the test precursor. Correlation between the morphology of obtained deposits and the process parameters is found. The capability of nanoparticles movement along the deposit surface in local near-surface electric field is demonstrated. The empirical model that satisfactorily explained the mechanism of fractal clusters formation from nanoparticles on the substrate surface is developed. The model indicates that the dynamics of deposit morphology variations is determined by two competing processes: electrical charge transfer by nanoparticles to the deposit surface and electrical charge running off over the surface under conditions of changeable conductivity of the deposit surface.

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Section: Introductionmentioning

confidence: 99%

Experimental study of fractal clusters formation from nanoparticles synthesized by atmospheric pressure plasma-enhanced chemical vapor deposition

2014

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“…PECVD is recognized as a unique method of organic thin film deposition and is commonly used for the deposition of inorganic and organic, doped, and undoped films. Silicon composite films is one area where thin films are deposited from various precursors such as silane (SiH 4 ), siloxane, and silazane mixed with other gases in varying ratios [68,69]. The two predominant forms of silicon which get deposited are hydrogenated amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon [70][71][72].…”

Section: Silicon-based Applicationsmentioning

confidence: 99%

“…The presence of H atoms in between the strained Si-Si bonds led to the disordered-to-ordered transitions [70,71]. The deposition parameters such as chamber pressure (P r ), gas mixture composition, and flow rates, RF power density (P w ), and substrate temperature can be varied to obtain the desired film properties, including the crystallinity [69,70]. Microdoping is another process used for the betterment of optical, electrical and structural properties of a microcrystalline silicon film for solar cell applications.…”

Section: Solar Cellsmentioning

confidence: 99%

Plasma-Enhanced Chemical Vapor Deposition: Where we are and the Outlook for the Future

Hamedani¹,

Macha²,

Bunning³

et al. 2016

Chemical Vapor Deposition - Recent Advances and Applications in Optical, Solar Cells and Solid State Devices

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Chemical vapor deposition (CVD) is a technique for the fabrication of thin films of polymeric materials, which has successfully overcome some of the issues faced by wet chemical fabrication and other deposition methods. There are many hybrid techniques, which arise from CVD and are constantly evolving in order to modify the properties of the fabricated thin films. Amongst them, plasma enhanced chemical vapor deposition (PECVD) is a technique that can extend the applicability of the method for various precursors, reactive organic and inorganic materials as well as inert materials. Organic/inorganic monomers, which are used as precursors in the PECVD technique, undergo disintegration and radical polymerization while exposed to a high-energy plasma stream, followed by thin film deposition. In this chapter, we have provided a summary of the history, various characteristics as well as the main applications of PECVD. By demonstrating the advantages and disadvantages of PECVD, we have provided a comparison of this technique with other techniques. PECVD, like any other techniques, still suffers from some restrictions, such as selection of appropriate monomers, or suitable inlet instrument. However, the remarkable properties of this technique and variety of possible applications make it an area of interest for researchers, and offers potential for many future developments.

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“…[8] More recently, the superior optical properties of nanocrystalline silicon (nc-Si:H) in comparison with those of hydrogenated amorphous silicon (a-Si:H) have stimulated research on nanostructured silicon films for photovoltaic applications. [9][10][11][12][13] The interest in silicon nanoparticles extends to the production of single-electron transistors, [14] new memory devices, [15] quantum dot lasers, [16] and especially new solid-state light sources based on the efficient room temperature photoluminescence of silicon nanocrystals [17][18][19][20][21] produced by low-pressure PECVD.…”

Section: Introductionmentioning

confidence: 99%

From Carbon Nanostructures to New Photoluminescence Sources: An Overview of New Perspectives and Emerging Applications of Low‐Pressure PECVD

Gordillo‐Vázquez¹,

Herrero²,

Tanarro³

2007

Chemical Vapor Deposition

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Low-pressure, plasma-enhanced (PE)CVD is a powerful and versatile technique that has been used for thin-film deposition and surface treatment since the early 1960s. However, it is only recently that it has been used in applications other than the different stages of microelectronic circuit fabrication. Now, PECVD is being used in emerging applications due to new materials and process requirements in a wide variety of areas, such as biomedical applications, solar cells, fuel cell development, fusion research, or the synthesis of silicon nanocrystals showing efficient photoluminescence, useful for future solid-state light sources. These new scenarios have stimulated further development of novel PECVD diagnostic techniques, together with fundamental experimental and theoretical studies aimed at a better understanding of some of the basic processes underlying the plasma/surface interaction. This paper gives an overview of some new research areas where PECVD is finding promising applications.

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New nanostructured silicon films grown by PECVD technique under controlled powder formation conditions

Cited by 5 publications

References 18 publications

Experimental study of fractal clusters formation from nanoparticles synthesized by atmospheric pressure plasma-enhanced chemical vapor deposition

Experimental study of fractal clusters formation from nanoparticles synthesized by atmospheric pressure plasma-enhanced chemical vapor deposition

Plasma-Enhanced Chemical Vapor Deposition: Where we are and the Outlook for the Future

From Carbon Nanostructures to New Photoluminescence Sources: An Overview of New Perspectives and Emerging Applications of Low‐Pressure PECVD

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