Tunneling in vertical μcSi/aSixCyOz:H/μcSi heterostructures

Fortunato, Elvira; Martins, Rodrigo; Ferreira, I.; Santos, M.; Maçarico, A.; Guimarães, L.

doi:10.1016/0022-3093(89)90380-3

Cited by 25 publications

(9 citation statements)

References 7 publications

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“…The relative amounts of the gaseous products are virtually independent of photolysis progress ( Fig. 1) and are in line with combination (Eqn [3]), disproportionation (Eqn [4]), cross-disproportionation (Eqn [5]) and hydrogen-abstraction reactions (Eqn [6]) of H 2 C=CH . and CH 3 .…”

Section: Resultsmentioning

confidence: 91%

“…The final products detected indicate that TMVSi is depleted by a blend of monomolecular decomposition and consecutive hydrogen-abstraction reactions of TMVSi with radicals (Eqn [6]) producing an unstable unsaturate which can be expected to split off a methyl radical and yield silene II (Eqn [9] The assumed steps thus produce very reactive products which can undergo a multitude of reactions, such as further cleavages and polymerizations. 28 The complex reaction scheme and the occurrence of thermal radical chain reactions is supported by the estimated number of TMVSi molecules depleated with one 193 nm photon.…”

Section: Resultsmentioning

confidence: 97%

“…[1][2][3][4] and find use in ceramic sensors for oxygen detection in high-temperature corrosive conditions and in photodetectors and solar cells. 5,6 Different kinds of these Si/C/O and Si/C/H/O materials are known: black glasses have been prepared by pyrolysis of polysiloxane gels (e.g. Refs.…”

Section: Introductionmentioning

confidence: 99%

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UV‐laser‐induced photolysis of trimethyl(vinyloxy)silane for chemical vapour deposition of polysiloxane films

Ouchi¹,

Koga²,

Bastl

et al. 1999

Applied Organom Chemis

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The UV‐induced photolysis of trimethyl(vinyloxy)silane (TMVSi) induced by ArF laser, affording a multitude of unsaturated hydrocarbons and a solid polydimethylsiloxane, represents a convenient process of chemical vapour deposition in which the silicon of the parent is almost completely utilized for the formation of the solid phase and in which the morphology and composition of the films is affected by the configuration of the substrate and laser beam. Copyright © 1999 John Wiley & Sons, Ltd.

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Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 97%

See 1 more Smart Citation

UV‐laser‐induced photolysis of trimethyl(vinyloxy)silane for chemical vapour deposition of polysiloxane films

Ouchi¹,

Koga²,

Bastl

et al. 1999

Applied Organom Chemis

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“…Nano-Si films exhibit optical gap widening (Furukawa and Miyasato 1988;Das 2003), photoluminescence (Takagi et al 1990;Liu et al 1994;Mangolini et al 2005;Sankaran et al 2005), electroluminescence (Dehlinger et al 2000) and resonant tunneling (Fortunate et al 1989), as a consequence of three dimensionally confined quantum size effect. Photoluminescence quantum yield exceeding 60% has been reported by recent investigations (Jurbergs et al 2006).…”

Section: Introductionmentioning

confidence: 98%

Nanocrystalline silicon prepared at high growth rate using helium dilution

Bhattacharya

Das

2008

Bull Mater Sci

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Growth and optimization of the nanocrystalline silicon (nc-Si : H) films have been studied by varying the electrical power applied to the helium diluted silane plasma in RF glow discharge. Wide optical gap and conducting intrinsic nanocrystalline silicon network of controlled crystalline volume fraction and oriented crystallographic lattice planes have been obtained at a reasonably high growth rate from helium diluted silane plasma, without using hydrogen. Improving crystallinity in the network comprising ~ 10 nm Si-nanocrystallites and contributing optical gap widening, conductivity ascending and that obtained during simultaneous escalation of the deposition rate, promises significant technological impact.

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“…Other possible applications have also been tried such as switching memories [26], tunnelling based devices [27], large area position sensitive detectors, (psd) [28,29] or in biosensors [30,31].…”

Section: Introductionmentioning

confidence: 99%