Large Area Deposition of Polymorphous Silicon by Plasma Enhanced Chemical Vapor Deposition at 27.12 MHz and 13.56 MHz

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3

“…The films were deposited on 1-mm-thick glass substrates in an RF-PECVD chamber, previously described in [20], at a substrate temperature of 150…”

“…Deposition conditions for p-type nc-Si : H thin films. Fs are the fluxes, D H is hydrogen dilution, R TMB is the TMB to silane flow ratio, T sub is the substrate temperature, p base and p w are base and working pressures, respectively, d I-E is the interelectrode distance and P RF is the power density [20,21]. a-Si : H incubation layer ranging in thickness from a few nanometers to half micron [12].…”

Study of environmental degradation of silver surface

“…where A is the transition matrix element, normally related with the density of the material, E 0 the peak transition resonance energy; E g the optical band gap and C the broadening parameter that it is inversely related with the short range order [13,14]. ε 1 (∞) is a fitting constant to prevent ε 1 from converging to zero for energies below the band gap.…”

Nanostructured silicon and its application to solar cells, position sensors and thin film transistors

“…The spectra in Figure 4 show the three main types of materials produced, which are: 1) amorphous films, represented by a single Gaussian peak centred around 480 cm -1 [59]; 2) the microcrystalline films, with a band close to the sharp peak around 516 cm -1 ; 3) the nanostructured films, represented by an improved short range order, where some nanocrystals exist (<2%). This is conjectured by a slight shift of the amorphous peak towards higher wavenumbers together with a slight narrowing of the full width at half maximum (FWHM).…”

“…The presence of such nanocrystals (of small size, < 10 nm) and of short range order clusters can lead to an internal film stress that are responsible for the shift observed [59].…”