Engineering of a-Si:H device stability by suitable design of interfaces

Martins, Rodrigo; Ferreira, I.; Águas, Hugo; Silva, V.; Fortunato, Elvira; Guimarães, L.

doi:10.1016/s0927-0248(01)00109-x

Cited by 5 publications

(7 citation statements)

References 13 publications

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“…The front TCO (SnO2) has been applied for reducing reflection loss. The back metal contact of the device was Al deposited by thermal evaporation [13,14].…”

Section: Simulation Modelmentioning

confidence: 99%

“…The design parameters have been adopted from some standard references to investigate the variation of efficiency, Voc, Jsc, and FF with the variation of thickness, doping concentrations of p-layers. The values of different material parameters fed into wxAMPS-1D are shown in Table 1 and have been reported in the literature [13,14,15].…”

Section: Simulation Modelmentioning

confidence: 99%

“…A comparison between the experimental [13,14] and the simulated cell performances at T=300K is summarized in deduce the open-circuit voltage, VOC = 0.76 V, the current density of short circuit, JSC =14.69 mA cm−2, the fill factor, FF = 63.07%, and the efficiency, η = 7.11 %.…”

Section: Jv Characteristic Of A-si:h Solar Cellmentioning

confidence: 99%

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Analysis and Optimization of the Performance of Hydrogenated Amorphous Silicon Solar Cell

Ayat¹,

Meftah²,

Ahmed³

et al. 2021

JNMES

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As the name implies, hydrogenated amorphous silicon (a-Si: H) is composed of silicon atoms which are in a disordered configuration away from all Bravais lattices. The hydrogenated amorphous silicon was manufactured in 1969 where there was a renewed interest in non-hydrogenated amorphous silicon. The use of hydrogenated amorphous silicon as the active material in solar cells inefficient but cheap, is currently much studied. We have presented in this work, the results of the numerical simulation of a-Si: H solar cell by the wxAMPS (Analysis of Microelectronic and Photonic Structures) software and the results were compared with those found experimentally, we find a good agreement. For the efficiency there was a difference of 0.17%. We also study the influence of the thickness of a-Si: H intrinsic layer on the photovoltaic parameters of the solar cell. This allows considering the use of amorphous thinner layers for photovoltaic applications. The efficiency has a maximum value of 7.117 %, corresponding to a intrinsic layer thickness of 560 nm. The using a-Si:H alloys provide a good solution to enhance a-Si:H solar cell performance. The use of a-SiC:H as a p-type window layer in amorphous silicon solar cells is one of its primary photovoltaic applications. The wide band gap of p-a-SiC:H alloy used as window layer for minimizing the optical loss. To improve the efficiency of a-Si:H solar cell, we have study by simulation the performance of the (p) a-SiC:H/(i) a-Si:H/ (n) a-Si:H heterojunction solar cell. The effects of a-SiC:H window layer on the photovoltaic performance have been investigated, where the best initial conversion efficiency of 10.59%.

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“…The front TCO (SnO2) has been applied for reducing reflection loss. The back metal contact of the device was Al deposited by thermal evaporation [13,14].…”

Section: Simulation Modelmentioning

confidence: 99%

Section: Simulation Modelmentioning

confidence: 99%

See 1 more Smart Citation

Analysis and Optimization of the Performance of Hydrogenated Amorphous Silicon Solar Cell

Ayat¹,

Meftah²,

Ahmed³

et al. 2021

JNMES

View full text Add to dashboard Cite

show abstract

“…Additionally, the buffer layers are efficient in controlling the diffusion between the dopants of the p-and i-layers [46][47][48]. The back contact consists of a thin Ag layer (≈30 nm) used to improve the light reflectance, followed by an Al layer (≈170 nm) with an electrode area of 0.07 cm 2 [49].…”

Section: Solar Cells Depositionmentioning

confidence: 99%

“…The high current density and good value obtained for the quantum efficiency are mainly attributed to the quality of the i-layer and to the p/i interface that does not annihilate the photocarriers generated, and the use of GZO as the front contact contributes since it is not degraded by the hydrogen plasma during the deposition of the p-layer [45][46][47]. This is probably due to the stability of the GZO leading to improved transmittance at the blue region respectively, leading to overall device efficiency of 7.4%.…”

Section: Solar Cellsmentioning

confidence: 99%