A: Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 µm) to minimize capacitance, a small pixel size (36.4 × 36.4 µm), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of 1 × 10 15 1 MeV n eq /cm 2 , compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of 1 × 10 15 1 MeV n eq /cm 2 .

The ATLAS collaboration is currently investigating CMOS monolithic pixel sensors for the outermost layer of the upgrade of its Inner Tracker (ITk). For this application, two large scale prototypes featuring small collection electrode have been produced in a radiation-hard process modification of a standard 0.18 μm CMOS imaging technology: the MALTA, with a novel asynchronous readout, and the TJ MONOPIX, based on the well established “column-drain” architecture. The MALTA chip is the first full-scale prototype suitable for the development of a monolithic module for the ITk. It features a fast and low-power front-end, an architecture designed to cope with an hit-rate up to 2 MHz/mm2 without clock distribution over the matrix, hence reducing total power consumption, and LVDS drivers. Laboratory tests confirmed the performance of the asynchronous architecture expected from simulations. Extensive testbeam measurements have proved an average detection efficiency of 96% before irradiation at a threshold of ∼230 e− with dispersion of ∼36 e− and ENC lower than 10 e−. A non fully functional pixel masking scheme, forces operation at relatively high thresholds, causing inefficiency. A severe degradation of efficiency has been measured after neutron irradiation at a fluence 1 × 1015 1 MeV neq/cm2. Consistent results have been produced with the TJ MONOPIX. A correlation with inefficiency plots and pixel layout has triggered TCAD simulations, ending up to two possible solutions, implemented in a new prototype, the MiniMALTA.

A: Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150 nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180 nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown. K: Depleted monolithic CMOS pixels, particle tracking detectors (solid-state detectors), Front-end electronics for detector readout, VLSI circuit 1Corresponding author.

A: Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 kΩ cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 kΩ cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode.Both chips were operational after thinning down to 100 µm and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of 1 × 10 15 n eq /cm 2 and its implications for future designs are discussed.

The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active sensor volume. We have characterised depleted monolithic active pixel sensors (DMAPS), which were produced in a novel modified imaging process implemented in the TowerJazz 180 nm CMOS process in the framework of the monolithic sensor development for the ALICE experiment. Sensors fabricated in this modified process feature full depletion of the sensitive layer, a sensor capacitance of only a few fF and radiation tolerance up to 1015 neq/cm2. This paper summarises the measurements of charge collection properties in beam tests and in the laboratory using radioactive sources and edge TCT. The results of these measurements show significantly improved radiation hardness obtained for sensors manufactured using the modified process. This has opened the way to the design of two large scale demonstrators for the ATLAS ITk. To achieve a design compatible with the requirements of the outer pixel layers of the tracker, a charge sensitive front-end taking 500 nA from a 1.8 V supply is combined with a fast digital readout architecture. The low-power front-end with a 25 ns time resolution exploits the low sensor capacitance to reduce noise and analogue power, while the implemented readout architectures minimise power by reducing the digital activity.

Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC) . LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of 50x250 µm 2 and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99% has been measured after irradiation to 1 · 10 15 n eq /cm 2 . TJ-Monopix is a large scale (1x2 cm 2 ) prototype featuring pixels of 36x40 µm 2 size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance (<= 3 f F) is exploited by a compact, low power front end optimized to meet the 25ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) ≈ 11e − , threshold ≈ 300 e − , threshold dispersion ≈ 30 e − and total power consumption lower than 120 mW/cm 2 .

We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The LGAD technology can be used to amplify the signal generated by the X-rays and to increase the signal-to-noise ratio, making single photon resolution in the soft X-ray energy range possible. In this paper, we report first results obtained from an LGAD sensor production with an optimized thin entrance window. Single photon detection of soft X-rays down to 452 eV has been demonstrated from measurements, with a signal-to-noise ratio better than 20.

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