We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The LGAD technology can be used to amplify the signal generated by the X-rays and to increase the signal-to-noise ratio, making single photon resolution in the soft X-ray energy range possible. In this paper, we report first results obtained from an LGAD sensor production with an optimized thin entrance window. Single photon detection of soft X-rays down to 452 eV has been demonstrated from measurements, with a signal-to-noise ratio better than 20.
A: AGIPD (adaptive gain integrating pixel detector) is a detector system developed for the European XFEL (XFEL.EU), which is currently being constructed in Hamburg, Germany. The XFEL.EU will operate with bunch trains at a repetition rate of 10 Hz. Each train consists of 2700 bunches with a temporal separation of 220 ns corresponding to a rate of 4.5 MHz. Each photon pulse has a duration of < 100 fs (rms) and contains up to 10 12 photons in an energy range between 0.25 and 25 keV. In order to cope with the large dynamic range, the first stage of each bumpbonded AGIPD ASIC is a charge sensitive preamplifier with three different gain settings that are dynamically switched during the charge integration. Dynamic gain switching allows single photon resolution in the high gain stage and can cover a dynamic range of 10 4 × 12.4 keV photons in the low gain stage. The burst structure of the bunch trains forces to have an intermediate in-pixel storage of the signals. The full scale chip has 352 in-pixel storage cells inside the pixel area of 200 × 200 µm 2 . This contribution will report on the measurements done with the new calibration circuitry of the AGIPD1.1 chip (without sensor). These results will be compared with the old version of the chip (AGIPD1.0). A new calibration method (that is not AGIPD specific) will also be shown.
Single-photon detection of X-rays in the energy range of 250 eV to 1 keV is difficult for hybrid detectors because of the low quantum efficiency and low signal-to-noise ratio. The low quantum efficiency is caused by the absorption of soft X-rays in the entrance window of the silicon sensors. The entrance window consists of an insensitive layer on the surface and a highly doped layer, which is typically from a few hundred nanometers to a couple of micrometers thick and is comparable to the absorption depth of soft X-ray photons (e.g. the attenuation length of 250 eV X-ray photons is ∼100 nm in silicon). The low signal-to-noise ratio is mainly caused by the small signal amplitude (e.g. ca. 70 electrons for 250 eV X-ray photons in silicon) with respect to the electronic noise. To improve the quantum efficiency, the entrance window must be optimized by minimizing the absorption of soft X-rays in the insensitive layer, and reducing charge recombination at the Si-SiO2 interface and in the highly doped region. Low gain avalanche diodes (LGADs) with a multiplication factor between 5 and 10 increase the signal amplitude and therefore improve the signal-to-noise ratio for soft X-rays, enabling single-photon detection down to 250 eV. Combining LGAD technology with an optimized entrance window technology can thus allow hybrid detectors to become a useful tool also for soft X-ray detection. In this work we present the optimization of the entrance window by studying the internal quantum efficiency of eight different process technology variations. The sensors are characterized using light emitting diodes with a wavelength of 405 nm. At this wavelength, the light has an absorption depth of 125 nm, equivalent to that of 276 eV X-rays. The best variation achieves an internal quantum efficiency of 0.992 for 405 nm UV light. Based on this study, further optimization of the quantum efficiency for soft X-rays detection is planned.
AGIPD is a hybrid pixel detector developed by DESY, PSI, and the Universities of Bonn and Hamburg. It is targeted for use at the European XFEL, a source with unique properties: a train of up to 2700 pulses is repeated at 10 Hz rate. The pulses inside a train are ≤ 100 fs long and separated by 220 ns, containing up to 10 12 photons of 12.4 keV each. The readout ASICs with 64 × 64 pixels each have to cope with these properties: Single photon sensitivity and a dynamic range up to > 10 4 photons/pixel in the same image as well as storage for as many as possible images of a pulse train for delayed readout, prior to the next train. The high impinging photon flux also requires a very radiation hard design of sensor and ASIC, which uses 130 nm CMOS technology and radiation tolerant techniques. The signal path inside a pixel of the ASIC consists of a charge sensitive preamplifier with 3 individual gains, adaptively selected by a subsequent discriminator. The preamp also feeds to a correlated double sampling stage, which writes to an analogue memory to record 352 frames. It is random-access, so it can be used most efficiently by overwriting bad or empty images. Encoded gain information is stored to a similar memory. Readout of these memories is via a common charge sensitive amplifier in each pixel, and multiplexers on four differential ports. Operation of the ASIC is controlled via a command interface, using 3 LVDS lines. It also serves to configure the chip's operational parameters and timings.
The aim of this project is to determine the imaging capabilities of a 25 μm pixel pitch GaAs:Cr sensor of 500 μm thickness bump-bonded to the charge integrating MÖNCH 03 readout chip (also called GaAs-MÖNCH assembly) and to assess the possibility to improve the spatial resolution by applying a position interpolation algorithm developed at PSI. Measurements were performed at the TOMCAT beamline of the Swiss Light Source (SLS) using photon beams in the energy range of 10–30 keV. The imaging experiments indicate the possibility to enhance the spatial resolution of the detector beyond its actual physical pixel pitch. We have quantified the spatial resolution of a GaAs-MÖNCH assembly by means of the modulation transfer function (MTF), achieving 10 μm at 10 keV and 12 μm at 20 keV photon energies. By applying a modified interpolation algorithm, a spatial resolution of ∼5 μm was obtained for 16 keV when binning to 2.5 μm virtual pixels, while with the silicon-MÖNCH assembly, we achieved a spatial resolution of 3.5 μm, which serves as gold standard. The results are promising because they open new possibilities to perform imaging measurements using the GaAs-MÖNCH assembly at photon energies above 15 keV, where silicon sensors suffer from a diminishing quantum efficiency.
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