Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Wang, T.; Barbero, M.; Berdalovic, I.; Bespin, C.; Bhat, S.; Breugnon, P.; Caicedo, I.; Cardella, R.; Chen, Z.; Değerli, Y.; Egidos, N.; Godiot, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Krüger, H.; Kugathasan, T.; Huegging, F.; Tobon, C. A. Marin; Moustakas, Konstantinos; Pangaud, P.; Schwemling, Philippe; Pernegger, H.; Pohl, D.; Rozanov, A.; Rymaszewski, P.; Snoeys, W.; Wermes, N.

doi:10.1088/1748-0221/13/03/c03039

Cited by 35 publications

(32 citation statements)

References 21 publications

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“…Moreover, previous e-TCT studies on test structures in LFoundry 150 nm CMOS [15] suggested that wafer thinning and back-side processing would result in an improvement in charge collection for irradiated thinned samples. By looking at their I-V curves (as depicted in Figure 3), the breakdown voltage was larger than 260 V independent of the sensor thickness or addition of metallization, in agreement with previous observations for unthinned samples [7,16]. I-V curves for back-side processed LF-Monopix samples of different thicknesses: 725 µm, 200 µm (with metallization) and 100 µm (without metallization).…”

Section: Leakage and Depletion After Thinningsupporting

confidence: 88%

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The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

Caicedo¹,

Barbero²,

Barrillon³

et al. 2019

J. Inst.

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A: Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 kΩ cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 kΩ cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode.Both chips were operational after thinning down to 100 µm and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of 1 × 10 15 n eq /cm 2 and its implications for future designs are discussed.

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Section: Leakage and Depletion After Thinningsupporting

confidence: 88%

“…TJ-Monopix is a DMAPS prototype with pixels using a small electrode for charge collection [7,8]. The chip was designed in a modified 180nm CMOS sensor process from Towerjazz, where a 1 kΩ cm epi-layer can be fully depleted through the addition of a low dose n-type implant [9].…”

Section: Tj-monopixmentioning

confidence: 99%

The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

Caicedo¹,

Barbero²,

Barrillon³

et al. 2019

J. Inst.

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“…Moreover they must be able to comply with the 25ns timing requirement of the ATLAS experiment. DMAPS prototypes manufactured in different technologies have been reported with encouraging results regarding the sensor radiation tolerance [4,5,6,7]. Additionally, multiple nested wells offered by modern CMOS processes allow for complex readout circuitry to be implemented inside the pixel, enabling the use of fast readout architectures.…”

Section: Introductionmentioning

confidence: 99%

CMOS monolithic pixel sensors based on the column-drain architecture for the HL-LHC upgrade

Moustakas

Barbero

Berdalovic

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC) . LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of 50x250 µm 2 and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99% has been measured after irradiation to 1 · 10 15 n eq /cm 2 . TJ-Monopix is a large scale (1x2 cm 2 ) prototype featuring pixels of 36x40 µm 2 size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance (<= 3 f F) is exploited by a compact, low power front end optimized to meet the 25ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) ≈ 11e − , threshold ≈ 300 e − , threshold dispersion ≈ 30 e − and total power consumption lower than 120 mW/cm 2 .

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“…LF-Monopix is a depleted MAPS (DMAPS) prototype program [120,121,130] aiming for ATLAS. The concept of the sensor relies on sizeable 250 × 50 µm pixels with high fill factor diodes.…”

Section: Lf-monopixmentioning

confidence: 99%

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

Deveaux

2019

J. Inst.

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A: CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate sensing elements together with analogue and digital data processing circuits into one monolithic chip. This turns into 50 µm thin sensors, which provide an outstanding typical spatial resolution of few µm and a detection efficiency for minimum ionizing particles above 99.9%. The radiation tolerance of CPS was initially constrained by the limits of the CMOS processes used for their production but has been improved by orders of magnitudes during the last years.This work reviews the related R&D on the radiation tolerance of traditional CPS with partially depleted active medium as pioneered by the MIMOSA-series developed by the IPHC Strasbourg. Procedures for assessing radiation damage in those non-standard pixels are discussed and the major mechanisms of radiation damage are introduced. Techniques for radiation hardening are shown. Moreover, recent results on next generation CPS featuring fully depleted sensors based on improved CMOS processes are summarized.

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Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Cited by 35 publications

References 21 publications

The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

CMOS monolithic pixel sensors based on the column-drain architecture for the HL-LHC upgrade

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

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