Low molecular weight P2VP-b-PS-b-P2VP triblock copolymer (poly(2-vinlypyridine)-block-polystyrene-block-poly(2-vinylpyridine)] is doped with copper chloride and microphase separated into lamellar line patterns with ultrahigh area density. Salt-doped P2VP-b-PS-b-P2VP triblock copolymer is self-assembled on the top of the nanoimprinted photoresist template, and metallic nanowires with long-range ordering are prepared with platinum-salt infiltration and plasma etching.
The combination of solvent annealing, surface reconstruction, and a tone-reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano-dots on a surface. The obtained silicon oxide nano-dots feature an areal density of 1.3 teradots inch(-2) .
The directed self-assembly of block copolymers (BCPs) is a promising route to generate highly ordered arrays of sub-10 nm features. Ultradense arrays of a monolayer of spherical microdomains or cylindrical microdomains oriented parallel to the surface have been produced where the lateral ordering is guided by surface patterning and the lattice defined by the patterning can be commensurate or incommensurate with the natural period of the BCP. Commensurability between the two can be used to elegantly manipulate the lateral ordering and orientation of the BCP microdomains so as to form well-aligned arrays of 1D nanowires or 2D addressable nanodots. No modification of the substrate surface, aside from the patterning, was used, making the influence of lattice mismatch and pattern amplification on the size, shape and pitch of the BCP microdomains more transparent. A skew angle between incommensurate lattices, defining a stretching or compression of the BCP chains to compensate for the lattice mismatch, is presented.
Abstract. Bit-patterned media (BPM) fabrication sets a high bar for nanopatterning especially in the aspects of lithography resolution and pattern transfer. Directed self-assembly (DSA) of spherical block copolymers (BCPs) provides promising pattern resolution extendibility and pattern layout flexibility as long as proper pre-pattern designs are provided. Polystyrene-block-polydimethylsiloxane in the form of monolayered spheres is used as a vehicle to form either globally densely packed nanodot arrays in the data zone or locally densely packed nanodot arrays in the servo zone on a BPM template. Skew compatibility of spherical BCPs is also discussed. The BCP dot template is then applied as the scaffold for pattern transfer into quartz to make a nanoimprint mold and further into magnetic storage media. Distributions of both dot sizes and dot spacings are closely monitored after DSA pattern formation and pattern transfer.
The next generation of hard disk drive technology for data storage densities beyond 5 Tb/in will require single-bit patterning of features with sub-10 nm dimensions by nanoimprint lithography. To address this challenge master templates are fabricated using pattern multiplication with atomic layer deposition (ALD). Sub-10 nm lithography requires a solid understanding of materials and their interactions. In this work we study two important oxide materials, silicon dioxide and titanium dioxide, as the pattern spacer and look at their interactions with carbon, chromium and silicon dioxide. We found that thermal titanium dioxide ALD allows for the conformal deposition of a spacer layer without damaging the carbon mandrel and eliminates the surface modification due to the reactivity of the metal-organic precursor. Finally, using self-assembled block copolymer lithography and thermal titanium dioxide spacer fabrication, we demonstrate pattern doubling with 7.5 nm half-pitch spacer features.
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