2011
DOI: 10.1002/adma.201102964
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Fabrication of Silicon Oxide Nanodots with an Areal Density Beyond 1 Teradots Inch−2

Abstract: The combination of solvent annealing, surface reconstruction, and a tone-reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano-dots on a surface. The obtained silicon oxide nano-dots feature an areal density of 1.3 teradots inch(-2) .

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Cited by 33 publications
(36 citation statements)
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“…We suggest that acoustic cavitation generates free radicals for bond cleavage of the PS-PEO. Generally, weak and strong acids are used for reconstruction or etching of these systems3536. Here, ethanol was preferred as an etching solvent because of its' vapour pressure, selected solubility into PEO (since they have similar solubility parameters) and chemistry.…”
Section: Discussionmentioning
confidence: 99%
“…We suggest that acoustic cavitation generates free radicals for bond cleavage of the PS-PEO. Generally, weak and strong acids are used for reconstruction or etching of these systems3536. Here, ethanol was preferred as an etching solvent because of its' vapour pressure, selected solubility into PEO (since they have similar solubility parameters) and chemistry.…”
Section: Discussionmentioning
confidence: 99%
“…H 2 O condensed exclusively in the PEO domains after an immersion of the PS-b-PEO BCP in water, which selectively reacts with SiCl 4 or TiCl 4 to generate SiO 2 or TiO 2 posts. A PDMS homopolymer, another precursor for SiO x , was used to fabricate silicon oxide pillars [77]. A thin layer of PDMS in heptane was spin-coated onto a porous PS-b-PEO template.…”
Section: (A) Ps-b-pi and Ps-b-pbmentioning
confidence: 99%
“…Afterward several authors reported the possibility to fabricate high-density metal nanodots using similar procedures (Jeong et al 2008;Hong et al 2010;Xiao et al 2005). Similarly, many authors explored the possibility to form amorphous SiO 2 nanodots using block copolymer thin films as a template (Park et al 2008;Xu et al 2011). Guarini and coworkers fabricated Si nanocrystal arrays for non-volatile memory applications using self-assembled block copolymers as an etch mask to pattern the underlying SiO 2 substrate and then used this nanoporous hard mask for the deposition of amorphous Si (a-Si) nanodots (Guarini et al 2003).…”
Section: Introductionmentioning
confidence: 97%