Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features

Dallorto, Stefano; Staaks, Daniel; Schwartzberg, Adam; Yang, XiaoMin; Lee, Kim Y.; Rangelow, Ivo W.; Cabrini, Stefano; Olynick, Deirdre L.

doi:10.1088/1361-6528/aad393

Cited by 20 publications

(17 citation statements)

References 45 publications

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“…The deposition was carried out at 80 °C for various ALD cycles, which is lower than the glass transition temperatures ( T g ) of both the PS and P4VP blocks ( T g PS is 101–106 °C and T g P4VP is 145–155 °C, respectively, provided by the supplier). This low temperature deposition was also reported elsewhere [20,31,32], thus can be carried out prosperously. Meanwhile, the ferric ions will not be replaced by the titanic precursors, which will be discussed later.…”

Section: Resultssupporting

confidence: 63%

Synthesis of Double-Shelled Hollow Inorganic Nanospheres through Block Copolymer-Metal Coordination and Atomic Layer Deposition

et al. 2019

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Double-shelled hollow (DSH) structures with varied inorganic compositions are confirmed to have improved performances in diverse applications, especially in lithium ion battery. However, it is still of great challenge to obtain these complex nanostructures with traditional hard templates and solution-based route. Here we report an innovative pathway for the preparation of the DSH nanospheres based on block copolymer self-assembly, metal–ligand coordination and atomic layer deposition. Polymeric composite micelles derived from amphiphilic block copolymers and ferric ions were prepared with heating-enabled micellization and metal–ligand coordination. The DSH nanospheres with Fe2O3 stands inner and TiO2 outer the structures can be obtained with atomic layer deposition of a thin layer of TiO2 followed with calcination in air. The coordination was carried out at room temperature and the deposition was performed at the low temperature of 80 °C, thus providing a feasible fabrication strategy for DSH structures without destruction of the templates. The cavity and the outer layer of the structures can also be simply tuned with the utilized block copolymers and the deposition cycles. These DSH inorganic nanospheres are expected to find vital applications in battery, catalysis, sensing and drug delivery, etc.

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Section: Resultssupporting

confidence: 63%

Synthesis of Double-Shelled Hollow Inorganic Nanospheres through Block Copolymer-Metal Coordination and Atomic Layer Deposition

et al. 2019

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“…Spacer lithography [32,79,[100][101][102][103][104][105][106][107][108][109] has been used primarily to reduce the size and pitch of nanowire or nano line patterns using the side edge of the existing nanopattern (Figure 3). It is also called self-aligned double patterning (SADP) [104,110] or spacer defined double patterning (SDDP) [111,112] because it requires a multistep patterning process. Spacer lithography utilizes the thin film deposited on the side edge of hundreds of nanoscale patterns as one pattern.…”

Section: Spacer Lithographymentioning

confidence: 99%

Recent Progress in Simple and Cost‐Effective Top‐Down Lithography for ≈10 nm Scale Nanopatterns: From Edge Lithography to Secondary Sputtering Lithography

et al. 2020

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The development of a simple and cost‐effective method for fabricating ≈10 nm scale nanopatterns over large areas is an important issue, owing to the performance enhancement such patterning brings to various applications including sensors, semiconductors, and flexible transparent electrodes. Although nanoimprinting, extreme ultraviolet, electron beams, and scanning probe litho‐graphy are candidates for developing such nanopatterns, they are limited to complicated procedures with low throughput and high startup cost, which are difficult to use in various academic and industry fields. Recently, several easy and cost‐effective lithographic approaches have been reported to produce ≈10 nm scale patterns without defects over large areas. This includes a method of reducing the size using the narrow edge of a pattern, which has been attracting attention for the past several decades. More recently, secondary sputtering lithography using an ion‐bombardment technique was reported as a new method to create high‐resolution and high‐aspect‐ratio structures. Recent progress in simple and cost‐effective top‐down lithography for ≈10 nm scale nanopatterns via edge and secondary sputtering techniques is reviewed. The principles, technical advances, and applications are demonstrated. Finally, the future direction of edge and secondary sputtering lithography research toward issues to be resolved to broaden applications is discussed.

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“…The demand for atomic-scale surface engineering and process controllability in advanced manufacturing and technologies has grown steadily in the latest years. 1 Critical dimensions and required pitch shrinkage call for increasingly higher etching precision and selectivity, [2][3][4][5] with the additional need for developing new processes to accommodate the increasing complexity in device structures. 6 Atomic layer etching (ALE) offers unmatched levels of control for etching performances, as required by the new technology node, and holds a great deal of potential to confront and overcome the challenges in modern nanofabrication techniques.…”

Section: Introductionmentioning

confidence: 99%

Balancing ion parameters and fluorocarbon chemical reactants for SiO2 pattern transfer control using fluorocarbon-based atomic layer etching

Dallorto

Lorenzon

Szornel

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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In manufacturing, etch profiles play a significant role in device patterning. Here, the authors present a study of the evolution of etch profiles of nanopatterned silicon oxide using a chromium hard mask and a CHF 3 /Ar atomic layer etching in a conventional inductively coupled plasma tool. The authors show the effect of substrate electrode temperature, chamber pressure, and electrode forward power on the etch profile evolution of nanopatterned silicon oxide. Chamber pressure has an especially significant role, with lower pressure leading to lower etch rates and higher pattern fidelity. The authors also find that at higher electrode forward power, the physical component of etching increases and more anisotropic etching is achieved. By carefully tuning the process parameters, the authors are able to find the best conditions to achieve aspect-ratio independent etching and high fidelity patterning, with an average sidewall angle of 87°± 1.5°and undercut values as low as 3.7 ± 0.5% for five trench sizes ranging from 150 to 30 nm. Furthermore, they provide some guidelines to understand the impact of plasma parameters on plasma ion distribution and thus on the atomic layer etching process.

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Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features

Cited by 20 publications

References 45 publications

Synthesis of Double-Shelled Hollow Inorganic Nanospheres through Block Copolymer-Metal Coordination and Atomic Layer Deposition

Synthesis of Double-Shelled Hollow Inorganic Nanospheres through Block Copolymer-Metal Coordination and Atomic Layer Deposition

Recent Progress in Simple and Cost‐Effective Top‐Down Lithography for ≈10 nm Scale Nanopatterns: From Edge Lithography to Secondary Sputtering Lithography

Balancing ion parameters and fluorocarbon chemical reactants for SiO2 pattern transfer control using fluorocarbon-based atomic layer etching

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